VCSEL with graphene conductive film and manufacturing method thereof
A graphene film and conductive film technology, applied in the field of VCSEL, can solve the problems of high threshold current, easy to be oxidized, and not lasing, and achieve the effects of suppressing edge gain, increasing carrier recombination, and reducing resistance
Pending Publication Date: 2020-08-07
XIAMEN QIANZHAO SEMICON TECH CO LTD
View PDF0 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0005] The object of the present invention is to provide a kind of VCSEL with graphene conductive film and its manufacture method, to solve the threshold current that causes when increasing the light output rate of VCSEL by coating on the surface of VCSEL laser in the prior art. Phenomena such as hole burning and non-lasing caused by oxidation
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0044] In order to make the content of the present invention clearer, the content of the present invention will be further described below in conjunction with the accompanying drawings. The invention is not limited to this specific example. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0045] like figure 1 Shown, a kind of VCSEL with graphene conductive film comprises:
[0046] substrate1;
[0047] The epitaxial stack disposed on the surface of the substrate 1, the epitaxial stack includes an N-type DBR layer 3, an N-type waveguide confinement layer 4, a quantum well 5, a P-type waveguide confinement layer 6, an oxide layer 7, P-type DBR layer 8, Al x Ga (1-x) As layer 9 and GaAs layer 10, the oxide layer 7 has a dielectric hole 7-1; the first direction is perpendicular to the substrate 1, and is directed fr...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a VCSEL with a graphene conductive film and a manufacturing method thereof. The exposed surface of an epitaxial lamination layer is covered with a graphene conductive film connected with the first electrode, the graphene conductive film comprises a first insulating layer, a graphene thin film layer and a second insulating layer which are stacked in sequence, and the first insulating layer or the second insulating layer is directly stacked on the exposed surface of the epitaxial lamination layer, and the carriers are uniformly diffused and concentrated in the effective light emitting area of the VCSEL chip, so that carrier recombination is increased, edge gain is inhibited, and the probability of high-order mode generation is reduced. Meanwhile, due to the fact that carriers are evenly distributed, joule heat is reduced to a certain degree, and therefore the effects of reducing the threshold value and improving the gain are achieved. And secondly, an AlxGa(1-x)Aslayer and a GaAs layer are arranged on the epitaxial laminated layer, so that the first electrode and part of the graphene conductive film are laminated on the GaAs layer, the transverse conductivityis increased, and the light absorption of the first electrode and the graphene conductive film is reduced.
Description
technical field [0001] The invention relates to the technical field of VCSEL, in particular to a VCSEL with a graphene conductive film and a manufacturing method thereof. Background technique [0002] VCSEL, the full name is Vertical Cavity Surface Emitting Laser (Vertical Cavity Surface Emitting Laser), developed on the basis of gallium arsenide semiconductor materials, different from other light sources such as LED (light emitting diode) and LD (Laser Diode, laser diode), has a volume Small, circular output spot, single longitudinal mode output, low threshold current, low price, easy integration into large-area arrays, etc., are widely used in optical communication, optical interconnection, optical storage and other fields. [0003] For existing VCSEL lasers, in order to increase the light output rate of VCSEL, ITO anti-reflection coating or SiN is usually arranged on the surface of VCSEL laser X AR coating or AlN AR coating. However, since the ITO anti-reflection coatin...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): H01S5/042H01S5/183H01S5/187H01S5/34
CPCH01S5/04252H01S5/183H01S5/187H01S5/34
Inventor 田宇李峰柱韩效亚杜石磊
Owner XIAMEN QIANZHAO SEMICON TECH CO LTD