Metrology system and method for determining characteristic of one or more structures on substrate

A measurement and characteristic technology, applied in the field of measurement system or inspection system, can solve the problems of unmanufacturable optical components and expensive optical components

Active Publication Date: 2020-08-11
ASML NETHERLANDS BV
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

This may result in optics that cannot be manufactured, or may result in opti

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  • Metrology system and method for determining characteristic of one or more structures on substrate
  • Metrology system and method for determining characteristic of one or more structures on substrate
  • Metrology system and method for determining characteristic of one or more structures on substrate

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[0022] In this document, the terms "radiation" and "beam" are used to cover all types of electromagnetic radiation, including ultraviolet radiation (for example having a wavelength of 365 nm, 248 nm, 193 nm, 157 nm or 126 nm) and extreme ultraviolet radiation (EUV, for example having wavelengths in the range of about 5-100 nm).

[0023] The terms "reticle", "mask" or "patterning device" as used herein may be interpreted broadly to refer to a general patterning device that can be used to impart a patterned cross-section to an incident radiation beam, the pattern The cross-section of V corresponds to the pattern to be produced in the target portion of the substrate. The term "light valve" can also be used in this context. Besides classical masks (transmissive or reflective; binary, phase-shifted, hybrid, etc.), examples of other such patterning devices include programmable mirror arrays and programmable LCD arrays.

[0024] figure 1 A lithographic apparatus LA is schematicall...

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Abstract

Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor beingconfigured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of European application 17194905.0 filed on October 5, 2017, European application 17199764.6 filed on November 2, 2017 and European application 17206967.6 filed on December 13, 2017, which are incorporated by reference in their entirety Incorporated into this article. technical field [0003] The invention relates to a metrology or inspection system for determining properties of a plurality of structures on a substrate. The invention also relates to a method for determining properties of a plurality of structures on a substrate. Background technique [0004] A lithographic apparatus is a machine configured to apply a desired pattern to a substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). A lithographic apparatus can, for example, project a pattern (also often referred to as a "design layout" or "design") at a patterning d...

Claims

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Application Information

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IPC IPC(8): G01B11/24G03F7/20
CPCG01B11/24G03F7/20G03F7/705G01B11/02G01B11/0625G01B2210/56G03F7/70625G03F7/7085G01N21/4788G01N21/9501G03F7/70158G03F7/70633G03F9/7088G01B11/25
Inventor P·A·J·蒂内曼斯A·J·登博夫A·E·A·科伦N·潘迪V·T·滕纳W·M·J·M·考恩帕特里克·沃纳阿
Owner ASML NETHERLANDS BV
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