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Active layer material, preparation method of active layer material and transistor

A technology of active layer and material structure, which is applied in the preparation of active layer materials and in the field of active layer materials, and can solve problems such as easy aggregation, uneven film thickness, and poor film-forming performance of thin film layers

Active Publication Date: 2020-08-25
SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the thin film layer of the ultra-thin organic thin film transistor prepared by this type of material has poor film-forming performance, is easy to aggregate, and has uneven film thickness.

Method used

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  • Active layer material, preparation method of active layer material and transistor
  • Active layer material, preparation method of active layer material and transistor
  • Active layer material, preparation method of active layer material and transistor

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Embodiment Construction

[0034] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.

[0035] The present application provides an active layer material. The active layer material is used to prepare the active layer. The structural formula of the active layer material is where the R 1 The structural formula of the compound includes One of the R 2 The structural formula of the group includes One of the R 3 The structural formula of the group includes One of , where "*" is with the R 1 Non-covalent bonds formed by complexation, P1, P2, P3, P4 and P5 are R 1 in and...

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Abstract

The invention provides an active layer material, a preparation method of an active layer and a transistor. The structural formula of the active layer material is described in the description of the invention; due to a complexing action in the active layer material, the active layer material has good film-forming performance and a regular molecular arrangement mode; the active layer prepared from the active layer material is applied to the transistor; the prepared active layer is not prone to aggregation; and the thickness of the film layer of the active layer is uniform.

Description

technical field [0001] The present application relates to the technical field of transistors, in particular to an active layer material, a method for preparing the active layer material, and a transistor. Background technique [0002] Ultra-thin organic thin-film transistors (OTFTs) are characterized by stretchable, superelastic, ultralight, and recyclable properties. This has drawn increasing attention to ultrathin organic thin film transistors in the fields of stretchable / wearable biomimetic flexible electronics and flexible displays. At present, bionic soft material systems such as conductive hydrogels / elastomers, structure optimization of stress buffer materials such as folds / helixes, and regulation of molecular chain structures (primary and secondary structures) of polymer materials have been applied to the construction of flexible pulleys. Extended electronic devices. However, the thin film layer of the ultra-thin organic thin film transistor prepared by using this t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07D519/00C08G61/12H01L51/05H01L51/30
CPCC07D519/00C08G61/126C08G61/124C08G2261/12C08G2261/1424C08G2261/3223C08G2261/3241C08G2261/312C08G2261/92H10K85/111H10K10/462
Inventor 崔巍
Owner SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD