This invention relates to the field of precision
alloy material
processing technology, and discloses an
Invar alloy precision strip for
semiconductor displays, its preparation method, and applications. This invention controls
sulfur content at the source and combines this with microalloying by adding 0.002–0.005 wt.%
rare earth cerium (Ce) to strengthen grain boundaries and improve thermoplasticity. It innovatively employs an ultra-high purity
smelting route of "
vacuum induction melting (VIM) + two
vacuum arc remelting (double VAR)" combined with intermediate
forging to remove non-metallic inclusions such as oxides and reduce gas content, obtaining ultra-high purity ingots. Finally, through a multi-stage high-temperature
diffusion forging, controlled rolling and cooling, multi-stage intermediate annealing, and precision cold rolling, a precision strip with a thickness of 0.10 mm is prepared. Through the above process, the strip prepared by this invention has extremely high purity, a uniform and fine
microstructure (grain size 8–10), and excellent surface quality and shape, fully meeting the stringent requirements of
semiconductor display devices for substrates.