Silicide films through selective deposition

Abstract

Methods for forming silicide films are disclosed. Methods of selectively depositing metal-containing films on silicon surfaces which are further processed to form silicide films are disclosed. Specific embodiments of the disclosure relate to the formation of silicide films on FinFET structures without the formation of a metal layer on the dielectric.

Description

technical field [0001] Embodiments of the present disclosure relate to methods for forming silicide films. More specifically, embodiments of the present disclosure relate to methods of selectively depositing films on silicon surfaces that are further processed to form silicide films. Background technique [0002] Fin Field Effect Transistors, also known as FinFETs, are a type of non-planar or three-dimensional transistor used in modern processor designs. As in earlier planar designs, FinFETs are typically built on SOI (silicon-on-insulator) substrates. However, FinFET designs also use a conductive channel that rises above the level of the insulator, resulting in a thin silicon-based structure shaped like a fin, which is called a gate electrode. This fin electrode allows multiple gates to operate on a single transistor. FinFET devices also feature significantly faster switching times and higher current densities than mainstream CMOS technologies. [0003] There is a conti...

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Problems solved by technology

However, some deposition precursors are not effectively blocked by current techniques

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