Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of low temperature polysilicon array substrate, array substrate and display panel

A technology of low-temperature polysilicon and array substrates, applied in semiconductor/solid-state device manufacturing, input/output process of data processing, instruments, etc., can solve problems such as inaccurate control of CD, excessive number of masks, long production cycle, etc., to achieve Precise control of etching width, saving mask and improving light transmittance

Active Publication Date: 2022-07-12
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The embodiment of the present application provides a method for preparing a low-temperature polysilicon array substrate that saves photomasks, so as to solve the technical problems in the prior art that the number of photomasks is too large, the production cost is high, the production cycle is long, and CD cannot be accurately controlled.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of low temperature polysilicon array substrate, array substrate and display panel
  • Preparation method of low temperature polysilicon array substrate, array substrate and display panel
  • Preparation method of low temperature polysilicon array substrate, array substrate and display panel

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0073] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the protection scope of the present application.

[0074] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", " rear, left, right, vertical, horizontal, top, bottom, inside, outside, clockwise, counterclockwise, etc., or The positional relationship is based on the orientation or positional relationship shown in the accompanying drawings, which is only for the convenience ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present application discloses a preparation method of a low-temperature polysilicon array substrate, an array substrate and a display panel. By reducing the LS layer and using a halftone mask, the dielectric layer, the passivation layer and the pixel electrode layer are patterned at the same time. A photoresist having an opaque area, a semitransparent area, a fully transparent area and a fully transparent area is formed on the pixel electrode layer, and a fully transparent area of ​​0.5 μm is arranged between the opaque area and the semitransparent area, and the fully transparent area is It is an area with a transmittance of 75-90%, which is used to increase the taper of the photoresist.

Description

technical field [0001] The present application relates to the field of display panel manufacturing, and in particular, to a method for preparing a mask-saving low-temperature polysilicon array substrate, an array substrate prepared by the method, and a display panel including the array substrate. Background technique [0002] Thin Film Transistor (TFT) Liquid Crystal Display (LCD) has the advantages of low power consumption, high contrast ratio, space saving and the like, and has become the most mainstream display device in the market. Compared with traditional amorphous silicon (A-Si) technology, Low Temperature Poly-silicon (LTPS) technology has higher carrier mobility and is widely used in small and medium-sized high-resolution TFT-LCD and In the production of Active Matrix Organic Light Emitting Diode (AMOLED) panels, the corresponding TFT array substrate needs more photomasks, and the product production cycle is longer. How to effectively reduce the production cycle of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/77H01L27/12G06F3/041G06F3/044
CPCH01L27/1259H01L27/1288H01L27/1214G06F3/0412G06F3/0445G06F2203/04103
Inventor 罗成志
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com