Probe card for high-temperature and high-pressure testing of power device and key structure thereof

Abstract

The invention discloses a probe card for high-temperature and high-pressure testing of a power device and a key structure thereof, and belongs to the technical field of semiconductor device testing. The probe card is sequentially provided with an air inlet system, a PCB, a switching layer, a guide plate and a probe from top to bottom. A plurality of lower air outlets and side air outlets are formed in the bottom of the air inlet system; first through holes which are the same as the lower air outlet holes in position, shape and number are distributed in the PCB; second through holes which are the same as the lower air outlet holes in position, shape and number are distributed in the transfer layer; third through holes with the same position, shape and number as the lower air outlet holes are distributed in the guide plate; the lower air outlet holes, the first through holes, the second through holes and the third through holes are coaxially arranged; high-temperature and high-pressure gas jetted from the lower air outlet holes sequentially passes through the first through holes, the second through holes and the third through holes and then is blown between the guide plate and a tested wafer. According to the invention, abnormal discharge between the probes in a high-voltage environment and buckling deformation and probe position drift of the probe card in a high-temperature environment can be suppressed at the same time.

Description

technical field [0001] The invention discloses a probe card for high temperature and high pressure testing of power devices and its key structure, belonging to the technical field of semiconductor device testing. Background technique [0002] With the continuous development of MEMS technology and semiconductor technology, the output of miniaturized high-power devices is increasing year by year. Many devices operate in high voltage and high temperature environments. Ensuring that these devices can function properly in such harsh environments requires testing their performance with probe cards. [0003] An important indicator of power device testing is the breakdown voltage, which can be as high as several thousand volts. When testing at such a high voltage, abnormal discharges may occur between the probes of the probe card, which can damage the test in an instant. equipment and the wafer under test. [0004] Another important indicator of power device testing is the operat...

AI Technical Summary

Problems solved by technology

Due to the differences in thermal expansion coefficients between the various parts of the probe card, temperature changes from room temperature to above 180 degrees Celsius will cause warpage and deformation of the probe card and position drift of the probe, which not only reduces the test effect and efficiency, but even Cause test failure, probe card damage and other problems

[0005] It can be seen that how to suppress the abnormal discharge phenomenon between the probes in a high-voltage environment, and how to suppress the warping deformation and probe position drift of the probe card in a high-temperature environment are the keys to be solved in the power device test probe card technology at this stage technical problems, however, no probe card capable of simultaneously breaking through these two technical problems has been found

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