A probe card for high temperature and high voltage testing of power devices and its key structure

Abstract

A probe card for high temperature and high pressure testing of power devices and its key structure of the present invention belong to the technical field of semiconductor device testing; needle; the bottom of the air intake system has multiple lower air outlets and side air outlets, the first through holes with the same position, shape and number as the lower air outlets are distributed on the PCB, and the lower air outlets are distributed on the transfer layer. , the second through holes with the same shape and number, the third through holes with the same position, shape and number as the lower air outlet are distributed on the guide plate, the lower air outlet, the first through hole, the second through hole and the second through hole The three through-holes are coaxially arranged, and the high-temperature and high-pressure gas jetted from the lower air outlet passes through the first through-hole, the second through-hole and the third through-hole in turn, and then blows into the gap between the guide plate and the wafer under test; The invention can simultaneously suppress the abnormal discharge between the probes in the high-voltage environment and the warping deformation of the probe card and the position drift of the probes in the high-temperature environment.

Description

technical field [0001] The invention discloses a probe card for high temperature and high pressure testing of power devices and its key structure, belonging to the technical field of semiconductor device testing. Background technique [0002] With the continuous development of MEMS technology and semiconductor technology, the output of miniaturized high-power devices is increasing year by year. Many devices operate in high voltage and high temperature environments. Ensuring that these devices can function properly in such harsh environments requires testing their performance with probe cards. [0003] An important indicator of power device testing is the breakdown voltage, which can be as high as several thousand volts. When testing at such a high voltage, abnormal discharges may occur between the probes of the probe card, which can damage the test in an instant. equipment and the wafer under test. [0004] Another important indicator of power device testing is the operat...

AI Technical Summary

Problems solved by technology

Due to the differences in thermal expansion coefficients between the various parts of the probe card, temperature changes from room temperature to above 180 degrees Celsius will cause warpage and deformation of the probe card and position drift of the probe, which not only reduces the test effect and efficiency, but even Cause test failure, probe card damage and other problems

[0005] It can be seen that how to suppress the abnormal discharge phenomenon between the probes in a high-voltage environment, and how to suppress the warping deformation and probe position drift of the probe card in a high-temperature environment are the keys to be solved in the power device test probe card technology at this stage technical problems, however, no probe card capable of simultaneously breaking through these two technical problems has been found

Images