Method for detecting monocrystalline silicon defect distribution area

Abstract

The invention provides a detection method of a monocrystalline silicon defect distribution area. The detection method comprises the following steps: averagely dividing a sample silicon wafer into twoparts; carrying out primary heat treatment on the first sample silicon wafer, and carrying out secondary heat treatment on the second sample silicon wafer; splicing the first sample silicon wafer subjected to primary heat treatment and the second sample silicon wafer subjected to secondary heat treatment to obtain a third sample silicon wafer, and performing minority carrier lifetime test on the third sample silicon wafer; and determining the defect distribution area of the sample silicon wafer according to the minority carrier lifetime test result of the third sample silicon wafer. Accordingto the detection method provided by the embodiment of the invention, the time for processing the sample silicon wafer can be reduced, the detection process is saved, the detection operation process issimplified, and the accuracy of the detection result is high.

Description

technical field [0001] The invention relates to the technical field of silicon wafer defect detection, in particular to a detection method for a single crystal silicon defect distribution area. Background technique [0002] The methods for making silicon wafers that are used more are: Floating Zone (FZ, hereinafter referred to as FZ) method or Czochralski (CZ, hereinafter referred to as CZ) method, wherein the CZ method is the most common. In the CZ method, polysilicon is first added to the quartz crucible, and then heated with a graphite heating element until it melts, and then the seed crystal is soaked in the silicon melt, and a single crystal silicon rod is grown by pulling up while rotating, and then The silicon wafer is sliced ​​(Sliced), etched (Etched), polished (Polished), and finally made into a wafer shape. [0003] Single crystal silicon or silicon wafers manufactured by the CZ method have crystal origin defects COP (Crystal OriginatedParticles), fluid pattern d...

AI Technical Summary

Problems solved by technology

[0006] In view of this, the present invention provides a method for detecting the defect distribution area of ​​single crystal silicon, which can solve the problems of cumbersome and time-consuming detection process for the defect area of ​​single crystal silicon in the prior art

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