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High-power narrow-linewidth laser

A laser, narrow linewidth technology, applied in the field of lasers, can solve problems such as poor linewidth, and achieve the effect of meeting application requirements and achieving high power

Inactive Publication Date: 2020-09-04
微源光子(深圳)科技有限公司
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Problems solved by technology

[0004] In the current technical solution, the narrow linewidth laser with a linewidth of 100kHz mainly relies on external cavity technology. When the typical Littrow structure and Littman structure achieve high power output, the power can only reach 40-60mW, which has certain limitations. sex
However, the semiconductor laser technology that can achieve high-power output has poor linewidth. Therefore, a high-power narrow-linewidth laser is designed to optimize the above problems.

Method used

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Embodiment Construction

[0021] In order to make the technical solutions of the present invention clearer and clearer to those skilled in the art, the present invention will be further described in detail below in conjunction with the examples and accompanying drawings, but the embodiments of the present invention are not limited thereto.

[0022] Such as Figure 1-Figure 2 As shown, a high-power narrow-linewidth laser provided in this embodiment,

[0023] Including the first collimating perspective group 5, the mode selection amplification chip 6, the second collimation lens group 8, the narrow band filter 10 and the pyramid reflector 11, the mode selection amplification chip 6 is located in one of the first collimation perspective group 5 side, the second collimating lens group 8 is located on the side of the mode selection amplification chip 6 away from the first collimation perspective group 5, and the narrow band filter 10 is located on the side of the second collimation lens group 8 away from th...

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Abstract

The invention discloses a high-power narrow-linewidth laser, and belongs to the technical field of lasers. Attenuation of a high-order mode part in an optical transverse mode is increased by an optical selection mode region, so that the high-order transverse mode of the laser cannot be generated. The light amplification area provides gain in the laser stable oscillation process. And one end, adjacent to the second collimating lens group, of the mode-selecting amplification chip is plated with a low-reflectivity antireflection film. The end, adjacent to the first collimating lens set, of the mode-selecting amplification chip is plated with a medium-reflectivity antireflection film, and compared with a traditional laser technology, the scheme can achieve high-power and narrow-linewidth laseroutput at the same time, and therefore various application requirements are met.

Description

technical field [0001] The invention relates to a laser, in particular to a high-power narrow-linewidth laser, and belongs to the technical field of lasers. Background technique [0002] Lasers are important core devices in the fields of industry, communication, sensing, and medical treatment. [0003] The linewidth and power of the laser are important characteristic indicators. Realizing a laser with narrow linewidth and high power has important application value. [0004] In the current technical solution, the narrow linewidth laser with a linewidth of 100kHz mainly relies on external cavity technology. When the typical Littrow structure and Littman structure achieve high power output, the power can only reach 40-60mW, which has certain limitations. sex. However, the semiconductor laser technology that can achieve high-power output has poor linewidth. Therefore, a high-power narrow-linewidth laser is designed to optimize the above problems. Contents of the invention ...

Claims

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Application Information

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IPC IPC(8): H01S3/06H01S3/08
CPCH01S3/0623H01S3/0804
Inventor 朱晓琪吴昊林段志儒
Owner 微源光子(深圳)科技有限公司
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