Vapor deposition of molybdenum using a bis(alkyl-arene) molybdenum precursor

Abstract

Described are vapor deposition methods for depositing molybdenum materials onto a substrate by the use of bis(alkyl-arene) molybdenum, also referred to herein as (alkyl-arene)2Mo, for example bis(ethyl-benzene) molybdenum ((EtBz)2Mo), as a precursor for such deposition, as well as structures that contain the deposited material.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of U.S. Provisional Patent Application No. 62 / 619,363 filed January 19, 2018 under 35 USC 119, the disclosure of which is hereby incorporated by reference in its entirety for all purposes middle. technical field [0003] The present invention relates to a vapor deposition process for depositing molybdenum-containing materials onto substrates by using bis(alkylaromatic)molybdenum, also referred to herein as (alkylaromatic) molybdenum 2 Mo, such as bis(ethylbenzene)molybdenum ((EtBz) 2 Mo), as a precursor for this type of deposition. Background technique [0004] Semiconductor and microelectronic devices and methods of making these devices relate to metals and metal-containing materials used in device structures such as electrodes, vias, barrier layers, interconnects, seed layers, and various other structures. During manufacture, the metal or metal-containing material is placed ont...

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Problems solved by technology

The disadvantage of tungsten deposited by using tungsten hexafluoride is that fluorine and hydrogen (H 2 ) react to form hydrogen fluoride (HF), which can be detrimental to the substrate, for example by causing etching of silicon wafers

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