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Vapor deposition of molybdenum using a bis(alkyl-arene) molybdenum precursor

An alkyl aromatic hydrocarbon, vapor deposition technology, applied in electrical components, electrical solid devices, semiconductor devices and other directions, can solve problems such as harmful substrates

Active Publication Date: 2020-09-04
ENTEGRIS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantage of tungsten deposited by using tungsten hexafluoride is that fluorine and hydrogen (H 2 ) react to form hydrogen fluoride (HF), which can be detrimental to the substrate, for example by causing etching of silicon wafers

Method used

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  • Vapor deposition of molybdenum using a bis(alkyl-arene) molybdenum precursor
  • Vapor deposition of molybdenum using a bis(alkyl-arene) molybdenum precursor
  • Vapor deposition of molybdenum using a bis(alkyl-arene) molybdenum precursor

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Embodiment Construction

[0017] The following description relates to vapor deposition methods suitable for depositing molybdenum in various forms onto substrates by using bis(alkylaromatic) molybdenum compounds as molybdenum precursors. Bis(alkylaromatic) molybdenum compounds (complexes) are also referred to herein as (alkylaromatic) 2 Mo compound. An example of a species of such compounds that have been found suitable as precursors is bis(ethylphenyl)molybdenum (i.e., (EtBz) 2 Mo). The precursors can be used in a vapor deposition (e.g., chemical vapor deposition) process to deposit molybdenum on a substrate in any form, e.g., as a molybdenum-containing compound or mixture, e.g., in the form of a molybdenum carbide seed layer; as a conductive structure form of elemental molybdenum; or as another deposited material containing molybdenum.

[0018] Chemical vapor deposition (CVD) is generally the process of combining chemical materials (derived from "precursors"), optionally with one or more other mat...

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Abstract

Described are vapor deposition methods for depositing molybdenum materials onto a substrate by the use of bis(alkyl-arene) molybdenum, also referred to herein as (alkyl-arene)2Mo, for example bis(ethyl-benzene) molybdenum ((EtBz)2Mo), as a precursor for such deposition, as well as structures that contain the deposited material.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of U.S. Provisional Patent Application No. 62 / 619,363 filed January 19, 2018 under 35 USC 119, the disclosure of which is hereby incorporated by reference in its entirety for all purposes middle. technical field [0003] The present invention relates to a vapor deposition process for depositing molybdenum-containing materials onto substrates by using bis(alkylaromatic)molybdenum, also referred to herein as (alkylaromatic) molybdenum 2 Mo, such as bis(ethylbenzene)molybdenum ((EtBz) 2 Mo), as a precursor for this type of deposition. Background technique [0004] Semiconductor and microelectronic devices and methods of making these devices relate to metals and metal-containing materials used in device structures such as electrodes, vias, barrier layers, interconnects, seed layers, and various other structures. During manufacture, the metal or metal-containing material is placed ont...

Claims

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Application Information

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IPC IPC(8): C23C16/18C23C16/32C23C16/08C23C16/02H01L21/285H01L21/02H01L21/324H01L27/11551H01L27/11524
CPCC23C16/18C23C16/32C23C16/0272C23C16/08H01L21/28556H01L21/02172H01L21/324H10B41/20H10B41/35H01L2924/01042C23C16/45553
Inventor R·小赖特孟双B·C·亨德里克斯T·H·鲍姆P·S·H·陈
Owner ENTEGRIS INC