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Spin-orbit moment magnetic device, magnetic tunnel junction device and magnetic memory

A magnetic tunnel junction, spin-orbit technology, used in magnetic field-controlled resistors, parts of electromagnetic equipment, etc.

Active Publication Date: 2022-07-12
BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing method only utilizes the single-interface spin accumulation, and there is room for further improvement of the magnetization switching efficiency. Therefore, research on more efficient magnetization switching methods is the focus of research in this field.

Method used

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  • Spin-orbit moment magnetic device, magnetic tunnel junction device and magnetic memory
  • Spin-orbit moment magnetic device, magnetic tunnel junction device and magnetic memory
  • Spin-orbit moment magnetic device, magnetic tunnel junction device and magnetic memory

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Embodiment Construction

[0021] In order to make the technical problems, technical solutions and advantages to be solved by the present application clearer, the technical solutions in the embodiments of the present application will be described in detail below with reference to the accompanying drawings.

[0022] The purpose of the present application is to provide a spin-orbit-torque magnetic device with high switching efficiency, which helps to improve the read-write efficiency of the magnetic memory.

[0023] figure 1 is a schematic structural diagram of a spin-orbit moment magnetic device in an embodiment of the present application. figure 1 In the illustrated embodiment, the spin-orbit moment magnetic device of the present application includes: a first magnetic free layer 101 , a metal coupling layer 102 and a second magnetic free layer 103 . The metal coupling layer 102 is disposed above the first magnetic free layer 101 , and the second magnetic free layer 103 is disposed above the metal coupl...

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Abstract

The present application provides a spin-orbit moment magnetic device, a magnetic tunnel junction device and a magnetic memory. The spin-orbit moment magnetic device includes: a first magnetic free layer, a metal coupling layer and a second magnetic free layer, the metal coupling layer is arranged above the first magnetic free layer, the second magnetic free layer is arranged above the metal coupling layer; the first magnetic free layer and the second magnetic free layer have perpendicular magnetic anisotropy ; the metal coupling layer is used to provide exchange interaction to enable the first magnetic free layer and the second magnetic free layer to achieve antiferromagnetic coupling.

Description

technical field [0001] The present application relates to the technical field of magnetic memory, and in particular, to a spin-orbit moment magnetic device, a magnetic tunnel junction device and a magnetic memory. Background technique [0002] Magnetic memory is a new type of non-volatile memory, which uses the direction of magnetization of magnetic moment to store "0" or "1" of data. It is one of the key technologies to solve the bottleneck problem of chip power consumption in the post-Moore era. Spin Orbit Torque (SOT) is one of the important ways to use current to operate magnetic memory magnetization inversion. The existing SOT flip utilizes the strong spin-orbit coupling effect (SOC) in the heavy metal lead layer, converts the laterally applied current into spin current, and forms spin accumulation at the interface of the heavy metal layer or the magnetic layer. The flipped perpendicular magnetic anisotropy magnetic tunnel junction is realized under the action of an ex...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/02H01L43/08H10N50/80H10N50/10
CPCH10N50/80H10N50/10
Inventor 王子路赵巍胜曹凯华乔俊峰
Owner BEIHANG UNIV