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High-performance semiconductor power device and manufacturing method thereof

A technology of power devices and semiconductors, which is applied in the field of high-performance semiconductor power devices and their manufacturing, can solve problems such as chip performance limitations, achieve low turn-off loss, realize the effects of turn-off loss, and high turn-off softness characteristics

Inactive Publication Date: 2020-09-29
安徽瑞迪微电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the performance of existing FS-IGBT chips has limitations

Method used

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  • High-performance semiconductor power device and manufacturing method thereof
  • High-performance semiconductor power device and manufacturing method thereof
  • High-performance semiconductor power device and manufacturing method thereof

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Experimental program
Comparison scheme
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Embodiment Construction

[0026] The specific embodiments of the present invention will be described in further detail below with reference to the accompanying drawings and through the description of the preferred embodiments.

[0027] In order to solve the limitation of the existing FS-IGBT technology, the present invention provides a field stop structure IGBT with variable doping concentration distribution, such as image 3 As shown, from the back to the front, 301 is the P-type collector region, 302a and 302b N-type field stop layer, 303N-type drift region, and the front cell structure of the IGBT composed of 304-309, including the trench gate 304, P-type well region 305 , N-type source region 306 , insulating dielectrics 307 and 308 , and emitter electrode (E) 309 . Among them, 304 to 309 are only schematic diagrams of the cell structure of the IGBT, which can actually have different variations. The FS-IGBT structure provided by this method focuses on the structure of the 302 field stop layer, whi...

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PUM

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Abstract

The invention discloses a high-performance semiconductor power device, which comprises a P-type collector region, an N-type field stop layer, an N-type drift region and a front cellular structure of an IGBT, and the structure of the N-type field stop layer is a multi-layer structure composed of a plurality of sub-field stop layers, and the doping concentrations of the sub-field stop layers are different. The defects of an FS-IGBT in the prior art are overcome. The variable doping field termination structure, the electric field termination and the turn-off softness can be independently controlled, so that the IGBT can be ensured to maintain stable low turn-off loss and high turn-off softness characteristics in a wide voltage range, and low turn-off loss is realized while enough turn-off softness is ensured.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a high-performance semiconductor power device and a manufacturing method thereof. Background technique [0002] Insulated Gate Bipolar Transistor (abbreviated as IGBT) is a semiconductor power device with excellent performance, which combines the advantages of the voltage-controlled period of MOSFET and the bipolar conduction characteristics of triode, with reduced on-voltage, high power frequency, and control circuit. Simple advantage. Since its invention in the 1980s, IGBT technology has undergone considerable development, and the existing mainstream IGBTs are field-stop IGBTs (FS-IGBTs for short). [0003] like figure 1 It is a schematic diagram of the typical structure of the existing FS-IGBT. From the back to the front, 101 is the P-type collector region, 102N-type field stop layer, 103N-type drift region, and 104-109 The front cell structure of the IGBT, includi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06H01L29/36H01L21/331
CPCH01L29/7397H01L29/0696H01L29/0684H01L29/36H01L29/66348
Inventor 肖秀光温世达吕磊
Owner 安徽瑞迪微电子有限公司