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A method of fabricating a vertical cavity surface emitting laser that prevents excessive oxidation during wet oxidation

A technology of vertical cavity surface emission and wet oxidation, which is applied in the direction of lasers, laser components, semiconductor lasers, etc., can solve the problems of no good solution to the degree of oxidation, fluctuation of oxidation rate, and difficulty in ensuring oxidation, so as to make up for the cost and Efficiency loss, prevent excessive oxidation, enhance large effect

Active Publication Date: 2021-04-06
潍坊华光光电子有限公司
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  • Claims
  • Application Information

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Problems solved by technology

Cracking caused by excessive temperature changes is mainly prevented by temperature control at different stages during wet oxidation. The oxidation completed by this method reduces the abnormal rate of cracking to a certain extent, but there is still no good solution to the degree of oxidation. In particular, the multiple adjustments of the temperature make the oxidation rate fluctuate more and it is difficult to ensure the exact oxidation

Method used

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  • A method of fabricating a vertical cavity surface emitting laser that prevents excessive oxidation during wet oxidation
  • A method of fabricating a vertical cavity surface emitting laser that prevents excessive oxidation during wet oxidation
  • A method of fabricating a vertical cavity surface emitting laser that prevents excessive oxidation during wet oxidation

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Embodiment

[0066] A method for producing a vertical cavity surface emitting laser that prevents excessive oxidation during wet oxidation, taking the production of a 980nm vertical cavity surface emitting laser as an example, comprises the following steps:

[0067] (1) if figure 1 As shown, the mesa is produced; the mesa after fabrication includes the wafer 1 with the epitaxial layer grown, the first SiO 2 The film layer 2, the channel 3, and the surface of the wafer 1 with the epitaxial layer grown with the first SiO 2 Membrane layer 2, channel 3 penetrates down through the mesa surface through the first SiO 2 film layer 2 and extends into the wafer 1 of the epitaxial layer; the first SiO 2 The thickness of film layer 2 is 3000-5000 Make countertops, including:

[0068] G. On the surface of the wafer 1 with the epitaxial layer grown, the thickness is 4000mm under the temperature condition of 200°C through thermal evaporation PECVD equipment. First SiO 2 film layer 2;

[0069] H....

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Abstract

The invention relates to a method for manufacturing a vertical cavity surface-emitting laser that prevents excessive oxidation during wet oxidation. The confinement layer metal produced during high-temperature oxidation can prevent excessive oxidation of water vapor to a large extent through the fabrication of confinement layer channels. In the present invention, the over-oxidation can be effectively prevented by making the pores of the limiting layer. During wet oxidation, it is only necessary to continue to increase the oxidation time on the basis of the original calculated average oxidation rate, which can completely ensure the completion of oxidation without excessive oxidation. In order to achieve the pore size we need, in fact, this kind of process will make the required oxidation channel in advance.

Description

technical field [0001] The invention relates to a method for manufacturing a vertical cavity surface-emitting laser capable of preventing excessive oxidation during wet oxidation, and belongs to the technical field of semiconductor processing. Background technique [0002] Vertical cavity surface emitting laser, referred to as Vcsel (Vertical Cavity Surface Emitting Laser), is a semiconductor device based on gallium arsenide material. The structure of Vcsel mainly has three parts, laser working material, collapse source, and optical resonant cavity. The working substance is the substance that emits laser light, but it cannot emit laser light at any time. It must be excited by the collapse source to form a particle population inversion and emit laser light. However, the laser light obtained in this way has a short life and low intensity. High, and there are many light wave modes, and the directivity is very poor. Therefore, it must also go through the resonant cavity compos...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/183
CPCH01S5/18311H01S2304/00
Inventor 李志虎于军邓桃张新徐现刚
Owner 潍坊华光光电子有限公司
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