LTCC substrate with high thermal conductivity and manufacturing method thereof

A high thermal conductivity, substrate technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problem that LTCC substrates cannot meet circuit heat dissipation requirements, and achieve important social benefits and economic value, The effect of improving the heat dissipation performance and increasing the contact area

Active Publication Date: 2020-10-02
XIAN MICROELECTRONICS TECH INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the above-mentioned shortcoming of prior art, provide a kind of LTCC substrate of high thermal c...

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  • LTCC substrate with high thermal conductivity and manufacturing method thereof
  • LTCC substrate with high thermal conductivity and manufacturing method thereof
  • LTCC substrate with high thermal conductivity and manufacturing method thereof

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Embodiment Construction

[0042] The present invention is described in further detail below in conjunction with accompanying drawing:

[0043] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, or in a specific orientation. construction and operation, and therefore cannot be construed as limiting the present invention; the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be construed as indicating or implying relative importance; in addition, unless otherwise Clearly stipulated and limited, the terms "installation"...

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Abstract

The invention discloses an LTCC substrate with high thermal conductivity and a manufacturing method thereof. According to the substrate, a sealing cover plate is arranged below an IC chip; a columnargroup is arranged at the lower part of the sealing cover plate; the whole sealing cover plate is made of a high-heat-conductivity material; the heat of the chip is transferred to the cooling liquid inthe channel through the sealing cover plate; according to the structure, heat of a heat source can be quickly and effectively transferred to a heat transfer path of fluid; circulating interconnectionof the substrate fluid channel and external fluid is achieved, the heat dissipation performance of the LTCC substrate is greatly improved, an active heat dissipation method is provided for a high-power SiP circuit and a radio frequency microwave module circuit, and important social benefits and economic value are achieved.

Description

【Technical field】 [0001] The invention belongs to the field of semiconductor hybrid integrated circuits, and in particular relates to an LTCC substrate with high thermal conductivity and a manufacturing method thereof. 【Background technique】 [0002] With the development of electronic technology, electronic devices are facing the development requirements of high-density integration and high power. Although the LTCC substrate has the characteristics of high-density integration, its heat dissipation power is low, which cannot meet the development needs. Channels, using heat-conducting fluids to improve the heat-conducting efficiency of substrates, are one of the important paths to realize high-density, high-thermal-conducting LTCC substrates. [0003] Under normal circumstances, the thermal conductivity of LTCC ceramic substrates is 2-3W / m-k, which is difficult to meet the heat dissipation requirements of high-power circuits, especially for highly integrated SiP products and L...

Claims

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Application Information

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IPC IPC(8): H01L23/498H01L23/367H01L23/373H01L23/473H01L21/48
CPCH01L23/49838H01L23/367H01L23/373H01L23/3736H01L23/3732H01L23/3738H01L23/473H01L21/4807H01L2924/19107H01L2224/73265H01L2224/48091H01L2924/00014
Inventor 肖刚郝沄杨宇军袁海陈宁任英哲
Owner XIAN MICROELECTRONICS TECH INST
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