A heat shield structure for single crystal production furnace and single crystal production furnace

A single crystal and growth furnace technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve problems such as uneven temperature gradients, achieve the effects of improving quality uniformity, achieving pulling speed, and high heat reflection efficiency
CN111763985BActive Publication Date: 2021-10-19SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI +1
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Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Patents(China)
Current Assignee / Owner
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Publication Date
2021-10-19

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Abstract

The invention discloses a heat shield structure for a single crystal production furnace, the heat shield structure is used to be arranged on the upper part of the melt crucible of the single crystal silicon growth furnace, and the heat shield structure includes a shell and a heat shield , the heat shield is arranged inside the shell, the outer surface of the bottom of the shell is used to face the inside of the melt crucible, and the angle formed between the plane where the heat shield is located and the plane where the bottom of the shell is located is an acute angle And the included angle faces the outer surface of the single crystal silicon. The purpose of the present invention is to provide a heat screen structure for single crystal production furnace and single crystal production furnace, the structure is simple, by changing the heat screen design, adding a heat shield to transfer the heat absorbed by the heat absorbing plate to the single crystal silicon , forming a heat channel in the heat shield to realize the optimization of the radial temperature gradient of the single crystal silicon, thereby realizing the control of the pulling speed, and further improving the radial quality uniformity of the single crystal silicon.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing equipment, in particular to a heat shield structure for a single crystal production furnace and the single crystal production furnace. Background technique

[0002] Monocrystalline silicon is the material basis for the sustainable development of modern information technology and communication technology, and plays an irreplaceable role. At present, the Czochralski method and the zone melting method used to grow single crystal silicon from the melt are the main methods of current single crystal silicon production. Since the production of monocrystalline silicon by the Czochralski method has the advantages of simple equipment and process, easy automatic control, high production efficiency, easy preparation of large-diameter monocrystalline silicon, fast crystal growth speed, high crystal purity and high integrity, the Czochralski method It is the most commonly used and most impo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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