Heat shield device for single crystal production furnace, control method and single crystal production furnace

A single crystal, single crystal silicon technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem of uneven temperature gradient, achieve radial temperature gradient optimization, high heat reflection efficiency, longitudinal temperature gradient Optimized effect

Active Publication Date: 2020-11-13
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing heat shield design still has the defect of uneven temperature gradient

Method used

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  • Heat shield device for single crystal production furnace, control method and single crystal production furnace
  • Heat shield device for single crystal production furnace, control method and single crystal production furnace
  • Heat shield device for single crystal production furnace, control method and single crystal production furnace

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] refer to figure 1 , figure 2 and Figure 8 , a heat shield device for a single crystal production furnace, the heat shield device 16 is used to be arranged on the upper part of the melt crucible 15 of a single crystal silicon growth furnace, and the heat shield device 16 includes a housing 1, a support member 2, and a heat shield 3 and the direction control assembly 4, the support 2 and the heat shield 3 are set in the housing 1, one end of the support is fixedly connected to the inner wall of the housing, the direction control assembly 4 is connected to the heat insulation board 3, and the support 2 is used as The fulcrum of the heat shield 3 cooperates with the direction control assembly 4 to control the relative rotation between the heat shield 3 and the housing 1, the rotatable angle of the heat shield 3 faces the cylindrical surface of the monocrystalline silicon 14, and the bottom of the housing 1 The surface is intended to be towards the inside of the melt cru...

Embodiment 2

[0061] The difference between this embodiment and Embodiment 1 is that a heat absorbing plate is added. Such as image 3 As shown, a heat shield device for a single crystal production furnace, the heat shield device 16 is used to be arranged on the upper part of the melt crucible 15 of a single crystal silicon growth furnace, and the heat shield device 16 includes a housing 1, a support member 2, a partition The heat plate 3 and the direction control assembly 4, the support 2 and the heat shield 3 are arranged in the casing 1, one end of the support is fixedly connected with the inner wall of the casing, the direction control assembly 4 is connected with the heat insulation plate 3, and the support 2 is used As the fulcrum of the heat shield 3 and cooperate with the direction control assembly 4 to control the relative rotation between the heat shield 3 and the housing 1, the rotatable angle of the heat shield 3 faces the cylindrical surface of the monocrystalline silicon 14, a...

Embodiment 3

[0063] The difference between this embodiment and Embodiment 1 lies in that the number of support members 2 and their positions, as well as the position of the direction control assembly in this embodiment are different. In this embodiment, the structure of the housing 1 is an annular structure with a cavity inside, the shape of the heat shield 3 is a fan ring, and the number of the heat shield 3 is 2, and the central angle of the sector of the two heat shields is Both are 180 degrees, set in the shell 1, when the two heat shields are in a horizontal state, they are located on the same horizontal plane and there is no overlapping area between them, a support that matches a single heat shield 3 There are 2, ie a total of 4 supports. The point where one end of the support member 2 contacts the heat insulation board 3 is the fulcrum of the heat insulation board 3 , and the contact point can be on the upper surface or the lower surface of the heat insulation board 3 . Two support...

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Abstract

The invention discloses a heat shield device for a single crystal production furnace. The heat shield device is arranged at the upper part of a melt crucible of a single crystal silicon growth furnace. The heat shield device comprises a shell, a supporting piece, a heat insulation plate and a direction control assembly. The supporting piece and the heat insulation plate are arranged in the shell.One end of the supporting piece is fixedly connected with the inner wall of the shell; the direction control assembly is connected with the heat insulation plate; the supporting piece is used as a supporting point of the heat insulation plate and is matched with the direction control assembly to control relative rotation between the heat insulation plate and the shell, the rotatable included angleof the heat insulation plate faces the cylindrical surface of the single crystal silicon, and the outer surface of the bottom of the shell is used for facing the interior of the melt crucible. The invention aims to provide a heat shield device for a single crystal production furnace and a single crystal production furnace. Dynamic control over the temperature gradient is achieved by changing thedesign of the heat shield and controlling the direction and the angle of the heat insulation plate, and therefore control over the pulling rate is achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing equipment, in particular to a heat shield device for a single crystal production furnace, a control method and a single crystal production furnace. Background technique [0002] Monocrystalline silicon is the material basis for the sustainable development of modern information technology and communication technology, and plays an irreplaceable role. At present, the Czochralski method and the zone melting method used to grow single crystal silicon from the melt are the main methods of current single crystal silicon production. Since the production of monocrystalline silicon by the Czochralski method has the advantages of simple equipment and process, easy automatic control, high production efficiency, easy preparation of large-diameter monocrystalline silicon, fast crystal growth speed, high crystal purity and high integrity, the Czochralski method It is the most commonly used ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B29/06C30B15/20
CPCC30B15/00C30B29/06C30B15/203C30B15/14C30B15/20Y10T117/10Y10T117/1068
Inventor 薛忠营李名浩魏星栗展魏涛刘赟
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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