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Novel ultraviolet LED chip structure

An LED chip and ultraviolet technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low utilization efficiency of phosphors and low extraction efficiency of ultraviolet light.

Pending Publication Date: 2020-10-13
佛山紫熙慧众科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to provide a novel ultraviolet LED chip structure, aiming at solving the problem of strong absorption of ultraviolet light by the GaN electrode contact layer in the n-type conductive layer, low extraction efficiency of ultraviolet light and phosphor powder in the existing ultraviolet LED chip. The problem of inefficient use of

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  • Novel ultraviolet LED chip structure

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Embodiment Construction

[0018] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0019] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation indicated by rear, left, right, vertical, horizontal, top, bottom, inside, outside, clockwise, counterclockwise, etc. The positional relationship is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating ...

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Abstract

The invention discloses a novel ultraviolet LED chip structure. The novel ultraviolet LED chip structure comprises a substrate, an AlN buffer, an n-type conductive layer, an ultraviolet band active region multi-quantum well and a p-type layer which are sequentially arranged from bottom to top; periodic holes are formed in the p-type layer; and an ultraviolet DBR layer is arranged in each hole. According to the technical schemes of the invention, the periodic holes of the ultraviolet DBR layer are formed in the p-type layer, so that the problems that in a GaN electrode contact layer in an n-type conductive layer in an existing ultraviolet LED chip has strong absorption on ultraviolet light, low ultraviolet light extraction efficiency, and low fluorescent powder utilization efficiency are solved.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a novel ultraviolet LED chip structure. Background technique [0002] Ultraviolet light emitting diode (light emitting diode, hereinafter referred to as LED), because of its short wavelength, high photon energy, and uniform beam, has important applications in the fields of physical sterilization, high color rendering index lighting, and high-density optical storage. At present, a large number of researches have made important breakthroughs in crystal quality, high A1 composition and short-wavelength structure design, and successfully prepared deep ultraviolet LED devices below 300 nanometers to achieve milliwatt-level power output and reliability. great progress has been made. [0003] However, in the current UV LED chip, the GaN electrode contact layer in the n-type conductive layer has strong absorption of ultraviolet light, low extraction efficiency of ultravio...

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Application Information

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IPC IPC(8): H01L33/10H01L33/06H01L33/12H01L33/32
CPCH01L33/10H01L33/06H01L33/12H01L33/32
Inventor 周启航
Owner 佛山紫熙慧众科技有限公司
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