Novel ultraviolet LED chip structure

An LED chip and ultraviolet technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low utilization efficiency of phosphors and low extraction efficiency of ultraviolet light.

Pending Publication Date: 2020-10-13
佛山紫熙慧众科技有限公司
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Problems solved by technology

[0005] The object of the present invention is to provide a novel ultraviolet LED chip structure, aiming at solving the problem of strong absorption of ultraviolet light by the GaN electro

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  • Novel ultraviolet LED chip structure

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[0018] The following describes the embodiments of the present invention in detail. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals indicate the same or similar elements or elements with the same or similar functions. The following embodiments described with reference to the accompanying drawings are exemplary, and are only used to explain the present invention, but should not be understood as limiting the present invention.

[0019] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " "Back", "Left", "Right", "Vertical", "Horizontal", "Top", "Bottom", "Inner", "Outer", "Clockwise", "Counterclockwise" and other directions or The positional relationship is based on the position or positional relationship shown in the drawings, and is only for the convenience of describing the present in...

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Abstract

The invention discloses a novel ultraviolet LED chip structure. The novel ultraviolet LED chip structure comprises a substrate, an AlN buffer, an n-type conductive layer, an ultraviolet band active region multi-quantum well and a p-type layer which are sequentially arranged from bottom to top; periodic holes are formed in the p-type layer; and an ultraviolet DBR layer is arranged in each hole. According to the technical schemes of the invention, the periodic holes of the ultraviolet DBR layer are formed in the p-type layer, so that the problems that in a GaN electrode contact layer in an n-type conductive layer in an existing ultraviolet LED chip has strong absorption on ultraviolet light, low ultraviolet light extraction efficiency, and low fluorescent powder utilization efficiency are solved.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a novel ultraviolet LED chip structure. Background technique [0002] Ultraviolet light emitting diode (light emitting diode, hereinafter referred to as LED), because of its short wavelength, high photon energy, and uniform beam, has important applications in the fields of physical sterilization, high color rendering index lighting, and high-density optical storage. At present, a large number of researches have made important breakthroughs in crystal quality, high A1 composition and short-wavelength structure design, and successfully prepared deep ultraviolet LED devices below 300 nanometers to achieve milliwatt-level power output and reliability. great progress has been made. [0003] However, in the current UV LED chip, the GaN electrode contact layer in the n-type conductive layer has strong absorption of ultraviolet light, low extraction efficiency of ultravio...

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Application Information

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IPC IPC(8): H01L33/10H01L33/06H01L33/12H01L33/32
CPCH01L33/10H01L33/06H01L33/12H01L33/32
Inventor 周启航
Owner 佛山紫熙慧众科技有限公司
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