Semiconductor structure and manufacturing method thereof

Abstract

The invention provides a semiconductor structure and a manufacturing method thereof. The method comprises the following steps providing a substrate; forming a silicon layer on the substrate, wherein the edge region of the upper surface of the substrate is exposed from the silicon layer; epitaxially growing a GaN-based semiconductor material on the silicon layer and the substrate to form a GaN semiconductor layer on the silicon layer and a plurality of GaN particles on the edge region of the upper surface of the substrate; and performing a first dry etching step to remove the gallium nitride particles, wherein the first dry etching step includes applying a first bias power, and the first bias power is equal to or greater than 1500 watts.

Description

technical field [0001] The present invention relates to semiconductor manufacturing technology, and in particular to semiconductor structures having gallium nitride semiconductor materials and methods of manufacturing the same. Background technique [0002] Gallium nitride (GaN-based) semiconductor materials have many excellent material properties, such as high heat resistance, wide band-gap, and high electron saturation rate. Therefore, gallium nitride semiconductor materials are suitable for high-speed and high-temperature operating environments. In recent years, gallium nitride semiconductor materials have been widely used in light emitting diode (light emitting diode, LED) devices and high frequency devices, such as high electron mobility transistors (high electron mobility transistors, HEMTs) with heterostructures. [0003] With the development of gallium nitride semiconductor materials, these semiconductor structures using gallium nitride semiconductor materials are u...

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Problems solved by technology

Therefore, the process conditions of semiconductor structures with gallium nitride semiconductor materials also face many new challenges

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