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Upward lifting vacuum furnace

A technology for pulling rods and furnaces, which is applied in the directions of self-melt pulling method, crystal growth, single crystal growth, etc. It can solve the problems of inability to guarantee the consistency of crystal growth, affected cooling medium, and high degree of dependence on operators

Inactive Publication Date: 2020-10-27
MEISHAN BOYA ADVANCED MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the operation and control system of the home-made vacuum induction furnace for high-temperature crystal growth is semi-automatic, and the crystal growth process (such as seeding necking, shouldering, equal diameter, finishing, cooling, etc.) cannot be realized. Fully automatic control, the crystal growth process is highly dependent on the operator, so the consistency of crystal growth cannot be guaranteed
The fully automatic single crystal growth induction furnace imported from abroad is expensive and difficult to maintain, and is not suitable for mass purchases
In addition, the inner wall of the furnace wall of the double-layer stainless steel water-cooled structure is generally welded on both sides, and the outer wall is welded on one side. Microcracks may occur, causing the vacuum environment to be affected or the cooling medium to leak

Method used

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Embodiment Construction

[0030] In order to make the purpose, technical solutions, and advantages of this application clearer, the following further describes the application in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the application, and are not used to limit the application.

[0031] On the contrary, this application covers any alternatives, modifications, equivalent methods and solutions defined by the claims in the spirit and scope of this application. Furthermore, in order to enable the public to have a better understanding of this application, some specific details are described in detail in the detailed description of this application below. Those skilled in the art can fully understand this application without the description of these details.

[0032] The embodiment of the application relates to a crystal growth device, which can be used to prepare single crystal materials suc...

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Abstract

The invention discloses an upward lifting vacuum furnace. The device comprises a hearth, a lifting rod, a movement device and a control system wherein a thermal field and a heat source are arranged inthe hearth; at least one part of the lifting rod is located in the hearth, and the movement device is in transmission connection with the lifting rod so as to drive the lifting rod to move up and down and / or rotate; the control system is used for controlling the movement direction and / or the movement speed of the movement device. According to the upward lifting vacuum furnace, automatic control over the crystal growth process can be achieved, the prepared single crystal material is good in structural consistency, the welding process is improved, and the sealing performance and corrosion resistance of the hearth are improved.

Description

[0001] Priority information [0002] This application claims the priority of the Chinese application number 201910772691.X filed on August 21, 2019, the entire content of which is incorporated herein by reference. Technical field [0003] This application relates to the field of crystal materials, in particular to a crystal growth device. Background technique [0004] Single crystal furnace is used to prepare silicon, germanium, gallium arsenide, yttrium aluminum garnet (Y 3 Al 5 O 12 , YAG for short), lutetium silicate (Lu 2 SiO 5 , LSO) and other special equipment for intraocular lens, is a comprehensive system integrating mechanics, electrical, computer, aerodynamics, fluid power, thermal dynamics and other disciplines. At present, the operation and control system of the domestic vacuum induction furnace for high-temperature crystal growth is basically semi-automatic, and the crystal growth process (such as seeding necking, shoulder setting, equal diameter, finishing, cooling, et...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B15/28C30B15/30
CPCC30B15/00C30B15/28C30B15/30
Inventor 王宇官伟明梁振兴
Owner MEISHAN BOYA ADVANCED MATERIALS CO LTD