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Magnetic random access memory and preparation method thereof

A technology of random access memory and magnetic tunnel junction, applied in static memory, digital memory information, information storage and other directions, can solve the problems of large write current, large current required for inversion, and unfavorable development of device miniaturization. Write current reduction, size reduction, and current reduction effects

Active Publication Date: 2022-07-08
SHANGHAI IND U TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a magnetic random access memory and its preparation method, which is used to solve the problem of magnetic tunnel junction structure reversal in the magnetic random access memory in the prior art. The current is large, which leads to the problem that the required write current is large, and in order to reduce the current required for the reversal of the magnetic tunnel junction structure, the size of the magnetic tunnel junction structure needs to be made larger, which is not conducive to the development of device miniaturization. question

Method used

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  • Magnetic random access memory and preparation method thereof
  • Magnetic random access memory and preparation method thereof
  • Magnetic random access memory and preparation method thereof

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Embodiment 1

[0056] see figure 1, the present invention provides a kind of preparation method of magnetic random access memory, the preparation method of described magnetic random access memory comprises the steps:

[0057] 1) Provide a substrate;

[0058] 2) forming the bottom edge of the U-shaped variable magnet connection structure on the upper surface of the substrate, the bottom edge extending along the first direction;

[0059] 3) an insulating dielectric layer is formed on the upper surface of the substrate and the surface of the bottom edge portion, and the insulating dielectric layer covers the upper surface of the substrate and the surface of the bottom edge portion;

[0060] 4) A read bit line is formed on the upper surface of the insulating medium layer, the read bit line extends along the second direction, and the second direction is perpendicular to the first direction; the read bit line is a line spans said bottom edge;

[0061] 5) forming a magnetic tunnel junction struc...

Embodiment 2

[0108] see figure 2 and image 3 , the present invention also provides a magnetic random access memory, the magnetic random access memory includes: a magnetic tunnel junction structure 14, the magnetic tunnel junction structure 14 includes opposite first sides and second sides; word lines 15, The word line 15 is connected to the top of the magnetic tunnel junction structure 14, and the word line extends along a first direction, and the first direction is perpendicular to the height direction of the magnetic tunnel junction structure 14; read bit line 13, the read bit line 13 is in contact with the bottom of the magnetic tunnel junction structure 14, and the read bit line 13 extends in a second direction, the second direction is in contact with the magnetic tunnel junction structure The height direction of 14 and the first direction are perpendicular to each other; write bit line 11, the write word line 11 is located on the second side of the magnetic tunnel junction structur...

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Abstract

The invention provides a magnetic random access memory and a preparation method thereof, comprising: a magnetic tunnel junction structure; a word line, which is connected to the top of the magnetic tunnel junction structure; a read bit line, which is in contact with the bottom of the magnetic tunnel junction structure; The write bit line is located on the second side of the magnetic tunnel junction structure, and has a distance from the read bit line and the word line; the U-shaped variable magnetic body connection structure includes a bottom edge and a side wall; the bottom edge is located at the read bit Below the line, the bottom edge portion straddles the read bit line along the first direction; the top of the sidewall portion on the first side of the magnetic tunnel junction structure is connected to the word line, and the sidewall portion on the second side of the magnetic tunnel junction structure is connected The top of the sidewall is connected to the write bit line, and the bottom of the sidewall is connected to the bottom edge. In the present invention, the U-shaped variable magnet connection structure is provided, and the magnetic field generated by the current flowing in the U-shaped variable magnet connection structure assists the inversion of the magnetic tunnel junction structure, thereby reducing the current required for the inversion of the magnetic tunnel junction structure, thereby reducing the required the write current.

Description

technical field [0001] The invention belongs to the technical field of semiconductor storage structures, and in particular relates to a magnetic random access memory and a preparation method thereof. Background technique [0002] Existing magnetic random access memories include several magnetic tunnel junction structures (MTJs) as memory cells in which the magnetic state of the free ferromagnetic layer can depend on the current flow of the word and bit lines connected to it induced magnetic field. The existing magnetic random access memory has the problem that the current required for the inversion of the magnetic tunnel junction structure is relatively large, resulting in a large required write current; and to reduce the current required for the inversion of the magnetic tunnel junction structure, it is necessary to The size of the magnetic tunnel junction structure is made larger, which is not conducive to the development of device miniaturization. SUMMARY OF THE INVENT...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/16
CPCG11C11/1655G11C11/161
Inventor 曹明霞
Owner SHANGHAI IND U TECH RES INST