Tray preheating cavity and corresponding PECVD equipment

Abstract

The invention provides a tray preheating cavity and corresponding PECVD equipment. The PECVD equipment comprises a loading module used for placing silicon wafers in trays, a tray transfer module usedfor sending the trays conveyed by the loading module to the tray preheating cavity and receiving the preheated trays, the tray reheating cavity for receiving and preheating the trays to a preset preheating temperature and sending the trays back to the tray transfer module, a loading cavity configured to receive the preheated trays conveyed by the tray transfer module, a PECVD process cavity for receiving the trays conveyed by the loading cavity, an unloading cavity for receiving the trays conveyed by the PECVD process cavity and an unloading module for receiving the trays conveyed by the unloading cavity and unloading the silicon wafers from the trays, wherein the I / N or I / P type amorphous silicon thin films are deposited on the sides, borne with the silicon wafers, of the trays through anintrinsic and doped PECVD process. According to the tray preheating cavity and the corresponding PECVD equipment, the equipment productivity, preheating flexibility and preheating efficiency can be effectively improved, and the equipment cost can be effectively lowered.

Description

technical field [0001] The invention relates to the field of solar cell manufacturing, in particular to a tray preheating chamber and corresponding PECVD equipment. Background technique [0002] Thin-film / crystalline silicon heterojunction solar cells (hereinafter referred to as heterojunction solar cells, also known as HIT or HJT or SHJ solar cells) belong to the third generation of high-efficiency solar cell technology, which combines the advantages of crystalline silicon and silicon thin films, and has The characteristics of high conversion efficiency and low temperature coefficient are one of the important development directions of high-efficiency crystalline silicon solar cells. In particular, the conversion efficiency of double-sided heterojunction solar cells can reach more than 26%, and has broad market prospects. [0003] The existing process for manufacturing heterojunction solar cells has high requirements on the temperature of silicon wafers. For example, the PE...

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Problems solved by technology

[0003] The existing process for manufacturing heterojunction solar cells has high requirements on the temperature of silicon wafers. For example, the PECVD process in plasma-enhanced chemical vapor deposition (PECVD) equipment must reach more than 200 degrees Celsius. When the silicon wafer enters the PECVD equipment, its temperature is not high enough. It is necessary for the tray and the silicon wafer to stay in the PECVD equipment for a long time to reach the ideal temperature before the corresponding PECVD process can be carried out. This will seriously affect the time-consuming production and cause PECVD equipment The production capacity is too low

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