A method and apparatus for controlling programming performance

Abstract

The invention provides a method and a device for controlling programming performance. The method is applied to an NOR flash memory. The NOR flash memory comprises a NOR flash memory and a NOR flash memory, the device comprises a temperature sensor, a clock frequency generator, a programming operation state machine and a programming storage unit, the programming operation state machine includes: aprogram operation state machine; a counter, the method comprising: a counter; the programming operation state machine receives a programming operation instruction and to-be-programmed data; and executing programming verification and programming pressurization operation according to the programming operation instruction and the to-be-programmed data, receiving the working temperature of the NOR flash memory sent by the temperature sensor, adjusting the time according to the working temperature, and completing the programming pressurization operation according to the adjusted time. When the programming pressurization operation is executed, the programming operation state machine adjusts the time of the single programming pressurization operation according to the working temperature of the NOR flash memory, completes the programming pressurization operation, controls the programming verification operation and the cycle period of the programming pressurization operation, and improves the programming performance of the NOR flash memory.

Description

technical field [0001] The invention relates to the storage field, in particular to a method and device for controlling programming performance. Background technique [0002] At present, NOR flash memory uses channel carrier hot electron injection to realize programming operation. The research results show that when the temperature rises, the activity of hot electrons increases, and the effective programming current generated will decrease. The time will be longer. [0003] refer to figure 1 , shows a schematic diagram of the programming principle of the existing NOR flash memory. The programming operation is to inject the hot electrons accelerated by the high electric field into the floating gate layer through the hot electron injection method, so as to change the threshold value of the floating gate layer to achieve the effect of programming. In order to form a conductive channel In order to make electrons reach the floating gate layer, a positive voltage needs to be add...

AI Technical Summary

Problems solved by technology

[0005] The method and device for controlling the programming performance provided by the present invention solve the problem that the temperature rises, the programming effective current decreases, the time for a single programming pressurization operation is fixed, and the time required to complete the entire programming operation will be longer, and even eventually Problems with inability to complete programming tasks

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