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A Three-Axis Relativistic Klystron Amplifier Capable of Suppressing Non-rotationally Symmetrical Miscellaneous Modes

A non-rotational symmetry and relativistic technology, applied in klystrons, electron tubes with velocity/density modulation electron flow, discharge tubes, etc., can solve the problem of exciting non-rotational symmetric heterogeneous modes, affecting the angular uniformity of the electric field in the injection cavity gap, It is difficult to increase the output microwave pulse width of the device to achieve the effect of improving gain and efficiency, facilitating long pulse operation and output microwave phase locking

Active Publication Date: 2021-07-20
NAT UNIV OF DEFENSE TECH
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Problems solved by technology

This technical scheme verifies the feasibility of the three-axis relativistic klystron amplifier to achieve GW-level phase-locked high-power microwave output in the high frequency band, which has important reference significance for the design of high-gain relativistic klystron amplifier, but the technical scheme has the following Disadvantages: (1) A single three-gap cluster cavity has limited ability to modulate the high-current electron beam, and the modulation depth of the electron beam is only 102%, so the extraction cavity cannot efficiently convert the energy of the electron beam into microwave energy, resulting in the The efficiency is relatively low; (2) In order to improve the modulation depth of the electron beam, the power required for injecting microwave signals is relatively high, resulting in a relatively low gain of the device; (3) The injection cavity adopts a dual-port microwave injection structure, which is prone to two The amplitude and phase of the injected microwaves at the port are inconsistent, which affects the angular uniformity of the electric field in the cavity gap and excites non-rotationally symmetrical heterogeneous modes; (4) The output microwave pulse width of the device is only 105 ns, mainly because the structure adopts the same Axial mode reflectors are used to suppress the self-excited oscillations of non-rotationally symmetric TE modes, while mode reflectors can only achieve high-efficiency suppression of a few non-rotationally symmetric TE modes; in experiments, non-rotationally symmetric The TE mode gradually starts to oscillate, which eventually makes it difficult to increase the output microwave pulse width of the device; therefore, in order to further increase the output microwave pulse width of TRKA, the TE mode must be realized from the source, that is, from the onset mechanism of the non-rotationally symmetric TE mode. Suppression of excited oscillations

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  • A Three-Axis Relativistic Klystron Amplifier Capable of Suppressing Non-rotationally Symmetrical Miscellaneous Modes
  • A Three-Axis Relativistic Klystron Amplifier Capable of Suppressing Non-rotationally Symmetrical Miscellaneous Modes
  • A Three-Axis Relativistic Klystron Amplifier Capable of Suppressing Non-rotationally Symmetrical Miscellaneous Modes

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Embodiment Construction

[0030] The accompanying drawings constituting this application are used to provide further explanations of the present invention, and the schematic embodiments and descriptions thereof of the present invention are used to explain the present invention, and do not constitute improper limitations to the present invention.

[0031] figure 1 It is a structural schematic diagram of the X-band three-axis relativistic klystron amplifier disclosed in the prior art mentioned in the background introduction; Reflecting cavity 106, grouping cavity 107, second reflecting cavity 108, extraction cavity 109, tapered waveguide 110, feedback loop 111, electron beam collector 112, support rod 113, microwave output port 114, solenoid magnetic field 115, injection waveguide 116, the overall structure is rotationally symmetrical about the central axis (ie the OZ axis); the left end of the cathode seat 101 is connected to the inner conductor of the pulse power source, and the left end of the anode o...

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Abstract

The invention belongs to the field of high-power microwave technology, and discloses a three-axis relativistic klystron amplifier capable of suppressing non-rotationally symmetrical mixed modes, including a cathode seat 201, a cathode 202, an anode outer cylinder 203, an inner conductor 204, an injection cavity 205, The first reflection cavity 206, the first cluster cavity 207, the second reflection cavity 208, the second cluster cavity 209, the third reflection cavity 210, the extraction cavity 211, the tapered waveguide 212, the feedback loop 213, the electron beam collector 214, The overall structure of the support rod 215, the microwave output port 216, the solenoid magnetic field 217 and the injection waveguide 218 is rotationally symmetrical about the central axis. The invention overcomes the shortcomings of the existing three-axis relativistic klystron amplifier, such as the complex lateral dual-port injection structure, and the difficulty of completely suppressing the self-excited oscillation of the non-rotational symmetry mode from the physical mechanism, etc., through the reasonable design of the electromagnetic structure of the device, and has good The frequency-locked and phase-locked characteristics of the system have important reference significance for the design of similar klystron amplifiers required for high-power microwave space coherent power synthesis.

Description

technical field [0001] The invention relates to microwave source devices in the technical field of high-power microwaves, in particular to a triaxial relativistic klystron amplifier (Triaxial Relativistic Klystron Amplifier, TRKA) capable of suppressing non-rotationally symmetrical mixed modes. Background technique [0002] High Power Microwave (HPM) usually refers to electromagnetic waves with a peak power greater than 100 MW and a frequency between 1 and 300 GHz. The high-power microwave source is the core component of the high-power microwave system. It converts the energy of the high-current relativistic electron beam into microwave energy through the special electromagnetic structure inside the device, and then generates directional high-power microwave radiation through the transmitting antenna. The pursuit of high output microwave power is the main development direction in the field of high-power microwave technology, but with the increase of output microwave power, t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J25/10H01J23/213H01J23/36
CPCH01J23/213H01J23/36H01J25/10H01J2223/213H01J2223/36H01J2225/10
Inventor 巨金川周云霄张威党方超张军
Owner NAT UNIV OF DEFENSE TECH
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