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External compensation circuit, array substrate, detection method

An external compensation and circuit technology, applied in the field of pixel compensation circuit, can solve the problem of difficulty in determining the magnitude and direction of leakage current

Active Publication Date: 2021-11-05
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

External current compensation can avoid the interference problem of the voltage during the detection process, but in the current detection process, the sensed current usually includes leakage current in addition to the pixel current, and the leakage current is very important for the compensation of the pixel circuit. However, it is difficult to determine the magnitude and direction of the leakage current

Method used

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  • External compensation circuit, array substrate, detection method
  • External compensation circuit, array substrate, detection method
  • External compensation circuit, array substrate, detection method

Examples

Experimental program
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Effect test

Embodiment 1

[0045] Such as Figure 1 to Figure 3 As shown, this embodiment provides an external compensation circuit, and the detection sub-circuit includes: a sampling unit and an integrating unit. Wherein, the sampling unit includes: a first capacitor C1, a second capacitor C2, a first switch S1, a second switch S2, a third switch S3, a fourth switch S4, and a fifth switch S5; the integrating unit includes an integrating module and a sixth switch S6; wherein, the first end of the first capacitor C1 is connected to the first node N1 through the first switch S1, and connected to the input end of the integrating module through the second switch S2; the second end of the first capacitor C1 is connected through the third switch S3 It is connected to the first node N1, and connected to the input terminal of the integration module through the fourth switch S4; the first end of the second capacitor C2 is connected to the first node N1 through the fifth switch S5; the second end of the second ca...

Embodiment 2

[0065] Such as Figure 4 As shown, this embodiment provides an array substrate including any one of the external compensation circuits provided in Embodiment 1.

[0066] Optionally, the array substrate provided in this embodiment may further include pixel circuits. Such as Figure 4 As shown, the pixel circuit provided in this embodiment can be used to compensate the pixel circuit of the display substrate. The pixel circuit can be a traditional 2T1C pixel circuit. Such as Figure 4 As shown, the pixel circuit may include two thin film transistors and a storage capacitor C0, wherein the two transistors include a switching transistor T1 and a driving transistor T2. The switching transistor T1 is used to transmit the image data Vdata or the reference voltage Vref under the control of the row scanning switch S1; the driving transistor T2 is used to control the working state of the OLED. The storage capacitor C0 is used to maintain the gate voltage on the driving transistor T2...

Embodiment 3

[0072] Such as Figure 5 As shown, this embodiment provides a detection method applied to the external compensation circuit provided in Embodiment 1, including:

[0073] S1. In the first detection stage, control the first switch S1, the fourth switch S4 and the sixth switch S6 to turn on; control the second switch S2, the third switch S3 and the fifth switch S5 to turn off, and the first capacitor C1 senses The leakage current output by the first node N1.

[0074] When sensing the driving current of the pixel circuit, in order to simplify the structure of the array substrate as much as possible, usually a plurality of pixel units are connected to the same sensing line for sensing respectively, and the leakage current on the sensing line grid is connected with the driving transistor The state of the TFT itself is related to its characteristics. When detecting the driving circuit in a certain pixel unit, the magnitude and direction of the leakage current detected by the detecti...

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Abstract

The invention provides an external compensation circuit, an array substrate and a detection method, belonging to the technical field of pixel compensation circuits. The external compensation circuit of the present invention is used to detect the current output to the display device in the pixel circuit, and it includes: a sampling unit and an integrating unit; the sampling unit is configured as the first switch, the fourth switch and the sixth switch in the first detection stage is in an on state; the second switch, the third switch and the fifth switch are in an off state; the first capacitive sensing sense line outputs the leakage current to the first node; in the second detection stage, the first switch, the fourth The switch and the sixth switch are in an off state; the second switch, the third switch, and the fifth switch are in an on state; the first capacitance sensing line outputs a current signal with a leakage current to the first node, and The current signal after the leakage current is eliminated is transmitted to the integration unit; the integration unit is configured to: integrate the current signal after the leakage current is eliminated in the second detection stage and then output it.

Description

technical field [0001] The invention belongs to the technical field of pixel compensation circuits, and in particular relates to an external compensation circuit, an array substrate and a detection method. Background technique [0002] Active-matrix organic light-emitting diodes (AMOLEDs) have been used in high-end potential and mobile device products due to their many advantages such as ultra-thin, high color gamut, high contrast, wide viewing angle, and fast response. [0003] AMOLED adopts active driving, which has a driving transistor TFT. Due to the deviation of the TFT process, the parameters such as the threshold voltage and electron mobility of each driving transistor cannot be completely consistent. Differences in threshold voltage and electron mobility of driving transistors will have adverse effects on the quality of displayed images. Therefore, the threshold voltage and electron mobility of the driving transistor need to be compensated. [0004] The traditional...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G09G3/3233
CPCG09G3/3233
Inventor 王糖祥杨飞陈燚
Owner BOE TECH GRP CO LTD