Microwave plasma chemical vapor phase deposition device

Abstract

The invention relates to a microwave plasma chemical vapor phase deposition device. The device comprises a waveguide device, a reaction cavity, a cooling shade, a shielding shade, and a rotary liftingmechanism; the reaction cavity is arranged below the waveguide device and is connected with the waveguide device; the cooling shade is connected with the reaction cavity and is used for carrying outair cooling heat dissipation on the reaction cavity; the shielding shade is arranged on the outer part of the reaction cavity in a surrounding manner so as to prevent electromagnetic radiation leakagefrom the reaction cavity; and the rotary lifting mechanism is connected with a growth platform arranged in the reaction cavity, so that the growth platform can make linear motion and rotary motion inthe reaction cavity. According to the microwave plasma chemical vapor phase deposition device, a stable growth platform can be provided for a chemical vapor deposition process, and the phenomenon that uneven growth of diamond films is avoided.

Description

technical field [0001] The invention belongs to the technical field of diamond film preparation, and in particular relates to a microwave plasma chemical vapor deposition device. Background technique [0002] Diamond film has a series of excellent properties such as high hardness, low coefficient of friction, high thermal conductivity, high light transmittance, wide band gap, high resistivity, high breakdown field strength and high carrier mobility. It is a kind of performance Extremely superior multifunctional material. It is precisely because of its excellent performance in so many aspects that diamond film is one of the most attractive hot materials in the field of new materials in the 21st century. [0003] At present, the methods of artificially synthesizing diamond include high temperature and high pressure method (HTHP), direct current arc plasma jet method (DCAPJ), hot wire chemical vapor deposition method (HFCVD), microwave plasma chemical vapor deposition method (...

AI Technical Summary

Problems solved by technology

[0004] When the existing microwave plasma chemical vapor deposition device prepares the diamond film, a large amount of heat will inevitably be generated in the reaction chamber, and the electromagnetic radiation in the reaction chamber will also have leakage problems. These problems will cause the film formation effect to be unsatisfactory.

In addition, during the synthesis process of the diamond film, the height of the diamond film will change, which will lead to uneven growth of the diamond film and affect the film quality of the diamond film.

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