Microwave plasma chemical vapor deposition device

Abstract

The invention relates to a microwave plasma chemical vapor deposition device. The device comprises a waveguide device, a reaction cavity and a rotating, lifting and cooling mechanism, wherein the waveguide device comprises a microwave antenna, and the microwave antenna comprises an air inlet pipe, a water cooling structure, an antenna lower disc and an air distribution disc; the reaction cavity isarranged below the waveguide device and connected with the waveguide device, and the antenna lower disc is positioned in the interior of the reaction cavity; the rotating, lifting and cooling mechanism comprises a main shaft, a lifting mechanism, a rotating mechanism and a cooling mechanism; and the top end of the main shaft is connected with a growth platform arranged in the reaction cavity, andthe lifting mechanism, the rotating mechanism and the cooling mechanism are all connected with the main shaft, so that the growth platform is subjected to water cooling and heat dissipation while themain shaft is driven to drive the growth platform to do linear motion and rotary motion in the reaction cavity. According to the microwave plasma chemical vapor deposition device, the stable growth platform can be provided for the chemical vapor deposition process, and the phenomenon of uneven growth of a diamond film is avoided.

Description

technical field [0001] The invention belongs to the technical field of diamond film preparation, and in particular relates to a microwave plasma chemical vapor deposition device. Background technique [0002] Diamond film has a series of excellent properties such as high hardness, low coefficient of friction, high thermal conductivity, high light transmittance, wide band gap, high resistivity, high breakdown field strength and high carrier mobility. It is a kind of performance Extremely superior multifunctional material. It is precisely because of its excellent performance in so many aspects that diamond film is one of the most attractive hot materials in the field of new materials in the 21st century. [0003] At present, the methods of artificially synthesizing diamond include high temperature and high pressure method (HTHP), direct current arc plasma jet method (DCAPJ), hot wire chemical vapor deposition method (HFCVD), microwave plasma chemical vapor deposition method (...

AI Technical Summary

Problems solved by technology

[0004] When the existing microwave plasma chemical vapor deposition device prepares the diamond film, it will inevitably generate a large amount of heat in the reaction chamber, which will cause the problem of unsatisfactory film formation effect, and the microwave radiation is transmitted to the reaction chamber through the dielectric window. , will cause microwave energy loss

In addition, during the synthesis process of the diamond film, the height of the diamond film will change, which will lead to uneven growth of the diamond film and affect the film quality of the diamond film.

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