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Thick-film resistance paste with electrostatic discharge resistance and low encapsulation change rate

A technology of thick film resistors and pastes, applied in thick film resistors, resistors, conductive materials dispersed in non-conductive inorganic materials, etc., can solve resistance drift, resistance drift, product encapsulation change rate Unqualified and other issues

Active Publication Date: 2020-11-10
西安宏星电子浆料科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] After the thick film resistor paste is sintered, there is a glass layer between some conductive phase particles, which will break down when electrostatic discharge occurs, resulting in resistance drift
When the encapsulation glass paste is sintered, it will penetrate into the resistor and cause the resistance value to drift, resulting in unqualified product encapsulation change rate

Method used

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  • Thick-film resistance paste with electrostatic discharge resistance and low encapsulation change rate
  • Thick-film resistance paste with electrostatic discharge resistance and low encapsulation change rate
  • Thick-film resistance paste with electrostatic discharge resistance and low encapsulation change rate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0120] In this embodiment, six kinds of glass powders are prepared: glass powder A1, glass powder A2, glass powder A3, glass powder B1, glass powder B2, and glass powder B3. As shown in Table 1, the formula of each glass powder is specifically:

[0121] Glass powder A1: 35 parts by weight of PbO, 30 parts by weight of SiO 2 , 20 parts by weight of CaO, 5 parts by weight of Al 2 o 3 , 7 parts by weight of B 2 o 3 , 0.5 parts by weight of Na 2 O, the ZnO of 2.5 parts by weight;

[0122] Glass powder A2: 35 parts by weight of PbO, 28.44 parts by weight of SiO 2 , 20 parts by weight of CaO, 5 parts by weight of Al 2 o 3 , 7 parts by weight of B 2 o 3 , 0.5 parts by weight of Na 2 The graphdiyne powder of the ZnO of O, 2.5 weight parts, 1.56 weight parts;

[0123] Glass powder A3: 35 parts by weight of PbO, 29.375 parts by weight of SiO 2 , 20 parts by weight of CaO, 5 parts by weight of Al 2 o 3 , 7 parts by weight of B 2 O3, 0.5 parts by weight of Na 2 The graphd...

Embodiment 2

[0132] In this embodiment, slurry 1 was prepared, and the film thickness, resistance value, positive temperature coefficient, negative temperature coefficient, electrostatic discharge and encapsulation change rate of the thick film resistor prepared from slurry 1 were measured.

[0133] The preparation process of slurry 1 is as follows:

[0134] Step 1: Weigh RuO 2 3g, Pb 2 Ru 2 o 613.3g, glass powder A1 32g, glass powder B1 16g, ZrSiO 4 5g, MnO 2 0.5g, graphdiyne powder 0.5g, organic carrier 29.7g;

[0135] Step 2: Use a glass rod to stir the solid powder and organic carrier in step 1 evenly, and leave it for more than 1 hour to complete the infiltration;

[0136] Step 3: roll on the upper three-roll machine to make the fineness ≦5 μm, and obtain the slurry 1.

[0137] Slurry 1 was screen printed, leveled, dried at 150°C for 10 minutes, and sintered in a tunnel furnace according to the thick film resistance sintering curve with a peak temperature of 850°C, a duratio...

Embodiment 3

[0139] In this embodiment, slurry 2 was prepared, and the film thickness, resistance value, positive temperature coefficient, negative temperature coefficient, electrostatic discharge and encapsulation change rate of the thick film resistor prepared from slurry 2 were measured.

[0140] The preparation process of slurry 2 is as follows:

[0141] Step 1: Weigh RuO 2 3g, Pb 2 Ru 2 o 6 13.3g, glass powder A1 32g, glass powder B1 16g, ZrSiO 4 5g, MnO 2 0.5g, graphdiyne powder 0.2g, organic carrier 30g;

[0142] Step 2: Use a glass rod to stir the solid powder and organic carrier in step 1 evenly, and leave it for more than 1 hour to complete the infiltration;

[0143] Step 3: rolling on the upper three-roll machine to make the fineness ≤ 5 μm, and obtain the slurry 2.

[0144] Slurry 2 was screen printed, leveled, dried at 150°C for 10 minutes, and sintered in a tunnel furnace according to the thick film resistance sintering curve with a peak temperature of 850°C, a dur...

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Abstract

The invention discloses thick-film resistor paste and a thick-film resistor prepared from the thick-film resistor paste. A proper amount of graphdiyne is added into thick-film resistor paste in the form of a paste additive or a proper amount of graphdiyne is introduced into the thick-film resistor paste in the form of a glass powder additive. The thick-film resistor paste can be used for preparinga thick-film resistor which is stable in resistance temperature change and small in electrostatic discharge resistance and / or encapsulation change rate.

Description

technical field [0001] The invention belongs to the field of thick-film resistor paste, in particular to a thick-film resistor paste with electrostatic discharge resistance and low encapsulation change rate. Background technique [0002] With the wide application of electronic products, light, small and thin become the mainstream development trend, and the requirements for the performance of integrated circuits are getting higher and higher. Resistors, as important functional components, play a decisive role in the stable operation of the entire circuit. The current resistance paste can no longer meet the requirements of development, so the development of new products with stable temperature changes, electrostatic discharge resistance and small encapsulation change rate has become a research hotspot. [0003] Thick film resistor paste is composed of conductive phase, glass phase, additives and organic vehicle. After high-temperature sintering, the organic phase volatilizes ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/16H01B1/18H01B1/22H01B1/24H01C7/00
CPCH01B1/16H01B1/18H01B1/22H01B1/24H01C7/003
Inventor 兰金鹏陆冬梅鹿宁王要东周宝荣王妮赵科良马倩
Owner 西安宏星电子浆料科技股份有限公司
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