MOS transistor and preparation method thereof
A technology of MOS tube and body, applied in the field of MOS tube and its preparation, can solve the problems of poor fit and easy falling of MOS tube and heat sink, and achieve the effect of solving poor fit, ensuring stability and improving service life
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Embodiment 1
[0029] The present invention is implemented as follows: as Figure 1-3 A MOS tube shown includes a MOS tube body 1, and a limiting groove 2 is set on both side walls and the bottom surface of the MOS tube body 1; the left wall of the MOS tube body 1 is only provided with a limiting groove 2, and the right wall is provided with a Two limit grooves 2, so as to play a fool-proof effect. The outer side of the MOS tube body 1 is provided with a heat dissipation block 3. The heat dissipation block 3 is provided with a fastening part 4 that is compatible with the limit groove 2. The heat dissipation block 3. From left to right, the outer surface is penetrated to form heat dissipation fins. The heat dissipation block 3 is attached to the end surface of the MOS tube body 1 with a ceramic sheet 5. The limit groove 2 extends downward from left to right and extends to the MOS tube body 1. The position of the half length of the whole makes the fastening part 4 of the cooling block 3 buckle...
Embodiment 2
[0040] This embodiment adopts the same structure and preparation process as in Embodiment 1, and its difference from Embodiment 1 is that the weight composition of the adhesive is 4 parts of active agent, 60 parts of latex powder, 6 parts of toner, 4 parts of acrylic resin, poly 4 parts of dimethyl siloxane, 4 parts of polyacrylamide, 60 parts of butyl acrylate, 10 parts of acrylic acid, 7 parts of paraffin, the tensile strength of the adhesive prepared according to the above raw material ratio is 0.64MPa, and can It has a good bonding effect at a temperature of 150 degrees.
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Abstract
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