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MOS transistor and preparation method thereof

A technology of MOS tube and body, applied in the field of MOS tube and its preparation, can solve the problems of poor fit and easy falling of MOS tube and heat sink, and achieve the effect of solving poor fit, ensuring stability and improving service life

Active Publication Date: 2020-11-10
互升科技(深圳)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention aims to solve the above-mentioned technical problems to a certain extent, and provides a MOS tube, which solves the problem of poor bonding and easy falling of the MOS tube and the cooling block, ensures the heat dissipation efficiency of the MOS tube, and improves the service life of the MOS tube

Method used

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  • MOS transistor and preparation method thereof
  • MOS transistor and preparation method thereof
  • MOS transistor and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0029] The present invention is implemented as follows: as Figure 1-3 A MOS tube shown includes a MOS tube body 1, and a limiting groove 2 is set on both side walls and the bottom surface of the MOS tube body 1; the left wall of the MOS tube body 1 is only provided with a limiting groove 2, and the right wall is provided with a Two limit grooves 2, so as to play a fool-proof effect. The outer side of the MOS tube body 1 is provided with a heat dissipation block 3. The heat dissipation block 3 is provided with a fastening part 4 that is compatible with the limit groove 2. The heat dissipation block 3. From left to right, the outer surface is penetrated to form heat dissipation fins. The heat dissipation block 3 is attached to the end surface of the MOS tube body 1 with a ceramic sheet 5. The limit groove 2 extends downward from left to right and extends to the MOS tube body 1. The position of the half length of the whole makes the fastening part 4 of the cooling block 3 buckle...

Embodiment 2

[0040] This embodiment adopts the same structure and preparation process as in Embodiment 1, and its difference from Embodiment 1 is that the weight composition of the adhesive is 4 parts of active agent, 60 parts of latex powder, 6 parts of toner, 4 parts of acrylic resin, poly 4 parts of dimethyl siloxane, 4 parts of polyacrylamide, 60 parts of butyl acrylate, 10 parts of acrylic acid, 7 parts of paraffin, the tensile strength of the adhesive prepared according to the above raw material ratio is 0.64MPa, and can It has a good bonding effect at a temperature of 150 degrees.

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Abstract

The invention discloses an MOS transistor, and the MOS transistor comprises an MOS transistor body, wherein limiting grooves are formed in the two side walls and the bottom surface of the MOS transistor body; a heat dissipation block is tightly attached to the outer side of the MOS transistor body, the heat dissipation block is provided with a fastening part matched with the limiting groove, and aceramic piece is arranged on the end face, tightly attached to the MOS transistor body, of the heat dissipation block. According to the invention, the problems of poor fitting and easy falling of theMOS transistor and the heat dissipation block are solved, the heat dissipation efficiency of the MOS transistor is ensured, and the service life of the MOS transistor is prolonged.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to a MOS tube and a preparation method thereof. Background technique [0002] MOS tubes are often used in inverter power supplies, solar controllers, discharge instruments, UPS power supplies and other products, especially high-power power supply products need to use MOS tubes, and MOS tubes are a power device, and the temperature is very high in normal workpieces. It is necessary to use a heat sink to dissipate heat for the MOS tube, but the traditional MOS tube does not fit well with the heat sink, and it is easy to fall off, making it unreliable to use, resulting in low heat dissipation efficiency of the MOS tube, and the long-term heating of the MOS tube will seriously affect the MOS tube service life. Contents of the invention [0003] The present invention aims to solve the above existing technical problems to a certain extent, and provides a MOS tube, which solves the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/367H01L23/373H01L23/40H01L29/78H01L21/336H01L21/50C09J4/06C09J4/02C09J11/08
CPCH01L23/367H01L23/3731H01L23/40H01L29/78H01L29/66477H01L21/50C09J4/06C09J11/08Y02P20/10
Inventor 不公告发明人
Owner 互升科技(深圳)有限公司
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