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Method for repairing metal layer photoetching process hot spot

A technology of photolithography process and repair method, which is applied in the field of repair of metal layer photolithography process hotspots, and can solve problems such as integrated circuit tape-out failure and impact on metal layer circuit performance

Pending Publication Date: 2020-11-13
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Hot spots in the photolithography process may affect the performance of the metal layer circuit, and even lead to the failure of the integrated circuit tape-out

Method used

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  • Method for repairing metal layer photoetching process hot spot
  • Method for repairing metal layer photoetching process hot spot
  • Method for repairing metal layer photoetching process hot spot

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Embodiment Construction

[0045] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. The advantages and features of the present invention will be more apparent from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0046] figure 1 It is a schematic diagram of the metal layer mask pattern and its simulated exposure pattern in the embodiment of the present invention. Such as figure 1 As shown in the background art, before the metal layer mask is published, hot spots in the photolithography process should be found and optical proximity repair should be performed on the metal layer mask pattern. At present, the repair method for the hot spots of the metal layer photolithography process commonly used in the industry is a model-...

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Abstract

The invention provides a method for repairing a metal layer photoetching process hot spot. The method comprises the following steps: S1, providing a mask pattern for forming a metal layer, the mask pattern having a plurality of process hot spot regions, and the process hot spot regions comprising a first region corresponding to a metal wire and a second region corresponding to a contact hole; S2,obtaining the part, with the distance to the second area smaller than a first set value, in the edge line of the first area to serve as an extended line segment; S3, moving the extended line segment outwards by a second set value to expand the first area, and updating the mask pattern; s4, performing simulation on the updated mask pattern; and S5, when the simulation fails, returning to the step S3, and when the simulation is passed or the simulation frequency reaches a third set value, outputting the latest mask pattern. According to the method for repairing a metal layer photoetching processhot spot, the repairing efficiency of the hot spots of the metal layer photoetching process can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for repairing hot spots in a metal layer photolithography process. Background technique [0002] Photolithography is the main process of integrated circuit manufacturing. Photolithography is one of the most complex technologies and an important driving force for the development of integrated circuit technology. The quality of the photolithography process determines the performance of the integrated circuit. The photolithography process is to transfer the pattern of the mask plate to the material of each layer on the surface of the silicon wafer, so that the photolithographic pattern related to the pattern of the mask plate can be obtained on the material of each layer on the surface of the silicon wafer. [0003] With the continuous reduction of technology nodes, in the photolithography process of the metal layer on the surface of the silicon wafer, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/72G03F7/20
CPCG03F1/72G03F7/70216
Inventor 何大权陈翰赵宝燕
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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