Laser annealing device and annealing method

Abstract

The invention provides a laser annealing device and annealing method, and the device comprises an objective table which is used for emitting a laser beam with a first set frequency and first set energy. The device further comprises a beam expanding and collimating element for expanding the laser beams and an adjusting module. The adjusting module is used for adjusting the frequency and the energyof the laser beams emitted from the beam expanding and collimating element; during preheating, the adjusting module adjusts the frequency and the energy of the laser beam to be a first set frequency and a second set energy respectively; during annealing, the adjusting module adjusts the frequency and the energy of the laser beam to be a second set frequency and a first set energy respectively. Thelaser annealing device further comprises a shaping element used for shaping the light beams emitted from the adjusting module, and a galvanometer system used for focusing the light beams emitted fromthe shaping element on a set depth layer of the wafer and enabling light spots focused on the set depth layer to move on the set depth layer. By controlling a single laser, the situation of unstablecontrol caused by multiple lasers is effectively avoided.

Description

technical field [0001] The present invention relates to the technical field of wafer manufacturing, and in particular, to a laser annealing device and an annealing method. Background technique [0002] With the progress and development of science and technology, laser has been used as a tool in all walks of life. Due to the characteristics of high brightness and high intensity of the laser, and the size of the laser spot can be focused to the micron level by the focusing mirror, the laser processing technology is favored in the industries with high precision processing requirements, especially for the semiconductor industry wafer manufacturing Among the technologies, laser processing technology is particularly popular. [0003] Initially, the annealing process of the wafers was carried out in a furnace containing a number of wafers supported in a holder. Electrical power is supplied to the resistive heater elements in the furnace walls to heat them to a temperature close t...

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Problems solved by technology

Although the required heat treatment time may be relatively short, both the heating rate and the cooling rate are relatively slow, on the order of about 15 °C / min

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