AlN dielectric film with high dielectric constant and high Q value, and preparation method thereof

A high dielectric constant, dielectric thin film technology, applied in chemical instruments and methods, from condensed steam, single crystal growth, etc., to achieve the effect of improving growth quality, easy handling and cleaning, and good stability

Inactive Publication Date: 2020-11-20
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is currently no method for preparing single-crystal

Method used

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  • AlN dielectric film with high dielectric constant and high Q value, and preparation method thereof
  • AlN dielectric film with high dielectric constant and high Q value, and preparation method thereof
  • AlN dielectric film with high dielectric constant and high Q value, and preparation method thereof

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preparation example Construction

[0032] The preparation method of the AlN dielectric film with high dielectric constant and high Q value of the present invention comprises the following preparation steps:

[0033] (1) Clean the sapphire substrate.

[0034] Preferably, the specific steps of cleaning the sapphire substrate are: first ultrasonically clean the sapphire substrate with an organic solvent for 12 to 16 minutes, and then rinse it with deionized water. The organic solvent is acetone, isopropanone, or alcohol, etc. ; Then put the sapphire substrate into concentrated H 2 SO 4 with concentrated H 3 PO 4 Boil in a mixed solution with a volume ratio of 3:1 for 8-10 minutes, then rinse with deionized water; finally blow dry with nitrogen for later use.

[0035] (2) heating the sapphire substrate, and in the high-purity nitrogen growth space, with 1.2~1.6J / cm 2 The laser energy density is high, and a pulsed laser is used to sputter an AlN target on the sapphire substrate.

[0036] Preferably, the AlN ta...

Embodiment 1

[0042] The preparation method of the AlN dielectric film with high dielectric constant and high Q value of the present invention is: on the surface of a clean sapphire substrate, by controlling the temperature of the sapphire substrate, the laser energy density, the vacuum degree of the growth environment, and cooling and annealing The process is to deposit and grow a single crystal AlN dielectric thin film. Specifically include the following steps:

[0043] (1) Clean the sapphire substrate.

[0044] First use an organic solvent to ultrasonically clean the sapphire substrate for 12 minutes, then rinse with deionized water; then put the sapphire substrate into 75wt% H 2 SO 4 with 85wt%H 3 PO 4 Boil in a mixed solution with a volume ratio of 3:1 for 9 minutes, then rinse with deionized water; finally blow dry with nitrogen for later use.

[0045] (2) Deposit AlN film on the surface of sapphire substrate.

[0046] Heating the sapphire substrate gradually to 700°C at a heati...

Embodiment 2

[0050] The preparation steps of the AlN dielectric thin film with high dielectric constant and high Q value in this embodiment 2 are the same as those in the embodiment 1, and the difference lies in the different condition parameters in the preparation process.

[0051] (1) Clean the sapphire substrate.

[0052] First use the organic solvent to ultrasonically clean the sapphire substrate for 14min, then rinse with deionized water; then put the sapphire substrate into 75wt%H 2 SO 4 with 85wt%H 3 PO 4 Boil in a mixed solution with a volume ratio of 3:1 for 10 minutes, then rinse with deionized water; finally blow dry with nitrogen for later use.

[0053] (2) Deposit AlN film on the surface of sapphire substrate.

[0054] Heating the sapphire substrate to 750°C gradually at a heating rate of 9°C / min, and growing in high-purity nitrogen gas at a rate of 1.5J / cm 2 On the surface of the sapphire substrate, an AlN ceramic target with a purity of 99.99% is sputtered by a pulsed l...

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Abstract

The invention relates to an AlN dielectric film with a high dielectric constant and a high Q value, and a preparation method thereof. The preparation method comprises the following steps: S1, heatinga sapphire substrate, and sputtering an AlN target material on the sapphire substrate by adopting pulse laser at a laser energy density of 1.2-1.6 J/cm<2> in a high-purity nitrogen growth space; and S2, after deposition of the AlN film on the sapphire substrate is completed and in-situ annealing is carried out, cooling to room temperature to obtain the single-crystal AlN dielectric film. Accordingto the invention, an AlN target material is etched by adopting a high-energy laser beam, so that the atomic mobility of the surface of the single-crystal AlN dielectric film can be improved, the growth quality of the single-crystal AlN dielectric film is improved, and the single-crystal AlN dielectric film with single orientation, high dielectric constant and high Q value is formed; and the preparation method of the single-crystal AlN dielectric film is simple in process and easy to operate, and industrial batch production is easy to realize.

Description

technical field [0001] The invention relates to the technical field of single crystal thin film preparation, in particular to an AlN dielectric thin film with high dielectric constant and high Q value and a preparation method thereof. Background technique [0002] With the rapid development of innovative technology fields such as 5G mobile communications, new energy vehicles, high-speed trains, photovoltaics, wind power, and smart grids, the loss characteristics, power capacity, operating frequency, and integration of electronic devices used in them have also been improved. Further requirements. Compared with the first and second generation semiconductor materials such as silicon (Si), germanium (Ge), gallium arsenide (GaAs), indium phosphide (InP), etc., the third generation semiconductor materials have high band gap, high thermal conductivity, With the characteristics of high breakdown field strength, high saturation electron drift rate and high bonding energy, its device...

Claims

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Application Information

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IPC IPC(8): C30B29/40C30B23/02C30B33/02
CPCC30B23/025C30B29/403C30B33/02
Inventor 陆旭兵成佳运樊贞
Owner SOUTH CHINA NORMAL UNIVERSITY
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