Back-illuminated image sensor and manufacturing method thereof
A technology of an image sensor and a manufacturing method, applied in the field of semiconductors, can solve the problems of poor pixel uniformity, poor thickness uniformity on the back of a back-illuminated image sensor, poor filling uniformity and uniformity, etc., so as to improve performance, improve thickness uniformity, and improve uniformity sexual effect
Pending Publication Date: 2020-11-24
SHANGHAI HUALI MICROELECTRONICS CORP
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[0004] However, due to the larger size of the added shallow trench isolation structure 20 (the opening width is wider), the filling uniformity of the deep trench isolation structure 10 and the shallow trench isolation structure 20 and the flattening of the substrate after the filling process The uniformity of the process is poor, so the thickness uniformity of the back of the back-illuminated image sensor is poor, resulting in poor uniformity of the pixels in the back-illuminated image sensor
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[0039] The back-illuminated image sensor proposed by the present invention and its manufacturing method will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0040] In order to facilitate the understanding of the features and advantages of the manufacturing method of the back-illuminated image sensor of the present invention, an existing manufacturing method of the back-illuminated image sensor is introduced below.
[0041] Figure 5a to Figure 5e It is a schematic diagram of the process of manufacturing a back-illuminated image sensor using an existing back-illuminated image sensor manufacturing met...
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Abstract
The invention provides a back-illuminated image sensor and a manufacturing method thereof. The manufacturing method comprises the steps: providing a semiconductor substrate, and forming a first grooveand a second groove in the semiconductor substrate, wherein the opening width of the first groove is larger than that of the second groove; forming a barrier layer, wherein the barrier layer covers the surface of the semiconductor substrate; forming a filling material layer, wherein the first groove and the second groove are filled with the filling material layer; and executing a planarization process, removing part of the thickness of the filling material layer, and stopping at the barrier layer. According to the manufacturing method, the filling material layer is subjected to planarizationprocessing, the barrier layer can be stopped, and the semiconductor substrate under the barrier layer is not influenced by the planarization process, so that the filling material layer can be fully processed, the thickness uniformity of the obtained back-illuminated image sensor is relatively good, and the performance of the back-illuminated image sensor is improved favorably.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a back-illuminated image sensor and a manufacturing method thereof. Background technique [0002] figure 1 It is a structural schematic diagram of a front-illuminated image sensor. figure 2 It is a schematic diagram of the structure of a back-illuminated image sensor. Compared figure 1 and figure 2 It can be seen that the incident light is transmitted from the back of the back-illuminated image sensor (BSI) without the wiring layer to the internal light-receiving surface, which avoids the obstruction of the incident light by metal lines and transistors. The back-illuminated image sensor has higher latitude, faster data throughput rate, and better low-light imaging capability, so the back-illuminated image sensor has been widely used. [0003] With the development of technology, the application of far-infrared imaging is becoming more and more extensive, such as secu...
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IPC IPC(8): H01L27/146
CPCH01L27/1464H01L27/14685H01L27/14683
Inventor 秦佑华陈昊瑜王奇伟
Owner SHANGHAI HUALI MICROELECTRONICS CORP