A preparation device and preparation process for electronic grade aluminum etching solution
A preparation device and aluminum etching technology, which is applied in the field of photosensitive chemistry, can solve problems such as high difficulty in coordination and control, suppression of production efficiency, and complex equipment structure, and achieve the effects of easy implementation, improved production efficiency, and simple operation of the preparation process
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Embodiment 1
[0045] Please refer to figure 1 , this embodiment provides a preparation device 1000 for electronic grade aluminum etching solution.
[0046] The preparation device 1000 includes: a first storage tank 100 for storing raw material nitric acid, a second storage tank 200 for storing raw material phosphoric acid, a third storage tank 300 for storing raw material glacial acetic acid, a storage tank for storing raw material ultrapure water The fourth storage tank 400 , the mixing tank 500 , and the precision filter 600 .
[0047] Wherein, the first storage tank 100, the second storage tank 200, the third storage tank 300 and the fourth storage tank 400 are all selectively communicated with the mixing tank 500, and the outlet of the mixing tank 500 is communicated with the inlet of the precision filter 600 .
[0048] It should be noted that "selective communication" means that the opening (connection) time and closing (disconnection) time can be flexibly selected according to actua...
Embodiment 2
[0077] see Figures 7 to 10 , this embodiment provides a preparation device for electronic grade aluminum etchant. Compared with Embodiment 1, the difference is that the framework 710' of the precision filter of the preparation device provided by this embodiment further includes: a fourth extension leaf 712d.
[0078] The fourth extension leaf 712d is cylindrical and arranged coaxially with the central cylinder 711 , and the inner wall of the fourth extension leaf 712d is connected to an end of the third extension leaf 712c away from the second extension leaf 712b. Along the axial direction of the central cylinder 711 , the lengths of the central cylinder 711 , the first extension leaf 712 a , the second extension leaf 712 b , the third extension leaf 712 c and the fourth extension leaf 712 d are the same.
[0079]The fourth extension leaf 712d is provided with a notch 712d' for the filtrate to pass through, and the notch 712d' extends continuously along the circumference of ...
Embodiment 3
[0084] see Figures 11 to 14 , this embodiment provides a preparation device for electronic grade aluminum etchant. Compared with Embodiment 1, the difference is that the skeleton 710" of the fine filter of the preparation device provided by this embodiment further includes: a fourth extension leaf 712d.
[0085] The fourth extension leaf 712d is cylindrical and arranged coaxially with the central cylinder 711 , and the inner wall of the fourth extension leaf 712d is connected to an end of the third extension leaf 712c away from the second extension leaf 712b. Along the axial direction of the central cylinder 711 , the lengths of the central cylinder 711 , the first extension leaf 712 a , the second extension leaf 712 b , the third extension leaf 712 c and the fourth extension leaf 712 d are the same.
[0086] The fourth extension leaf 712d is provided with a notch 712d' for the filtrate to pass through. The notch 712d' extends along the circumference of the fourth extension ...
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