Film bulk acoustic resonator

A thin-film bulk acoustic wave and resonator technology, applied in the direction of electrical components, impedance networks, etc., to achieve the effect of improving the quality factor, high quality factor, and realizing reflection

Pending Publication Date: 2020-12-04
NINGBO SEMICON INT CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the quality factor (Q) of the cavity-type thin-film bulk acoustic resonator currently produced needs to be improved to better meet the needs of high-performance radio frequency systems.

Method used

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Examples

Experimental program
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Embodiment 1

[0029] Embodiment 1 of the present invention provides a thin film bulk acoustic resonator, figure 1 It is a structural schematic diagram of the thin film bulk acoustic resonator of Embodiment 1 of the present invention, please refer to figure 1 , the thin film bulk acoustic resonator comprises:

[0030] a first substrate 100;

[0031] a support layer 206 disposed on the first substrate 100, the support layer 206 is provided with a first cavity 230 penetrating through the support layer 206;

[0032] Piezoelectric stacked structure, covering the first cavity 230, the piezoelectric stacked structure includes sequentially stacked first electrode 202, piezoelectric layer 203 and second electrode 204 from top to bottom, in the effective resonance region ( Shown in the dotted line box) the first electrode 202, the piezoelectric layer 203 and the second electrode 204 overlap in a direction perpendicular to the piezoelectric layer 203, and the effective resonance area is located in t...

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Abstract

The invention discloses a film bulk acoustic resonator, which comprises a first substrate; a supporting layer arranged on the first substrate, wherein a first cavity penetrating through the supportinglayer is formed in the supporting layer; and a piezoelectric laminated structure covering the first cavity, wherein the piezoelectric laminated structure comprises a first electrode, a piezoelectriclayer and a second electrode which are sequentially laminated from top to bottom, the first electrode, the piezoelectric layer and the second electrode are overlapped in the direction perpendicular tothe surface of the piezoelectric layer in an effective resonance area, and the effective resonance area is located above an area surrounded by the first cavity; a first groove penetrating through thepiezoelectric layer and the second electrode is formed in the piezoelectric laminated structure, the side wall, close to the effective resonance area, of the first groove is a first side face, the included angle between the first side face and the surface of the first electrode is 85-95 degrees, and part of the boundary of the effective resonance area is composed of the first side face.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a thin-film bulk acoustic wave resonator. Background technique [0002] Since RF communication technology was developed in the early 1990s, RF front-end modules have gradually become the core components of communication equipment. Among all RF front-end modules, filters have become the components with the strongest growth momentum and the greatest development prospects. With the rapid development of wireless communication technology and the maturity of 5G communication protocols, the market has also put forward stricter standards for the performance of RF filters in all aspects. The performance of a filter is determined by the resonator units that make up the filter. Among the existing filters, the film bulk acoustic resonator (FBAR) has the characteristics of small size, low insertion loss, large out-of-band suppression, high quality factor, high operating fre...

Claims

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Application Information

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IPC IPC(8): H03H9/17
CPCH03H9/171
Inventor 黄河罗海龙李伟
Owner NINGBO SEMICON INT CORP
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