Semiconductor device
A semiconductor and device technology, applied in the field of super junction semiconductor devices, can solve problems such as reducing the risk of breakdown voltage of semiconductor devices
Pending Publication Date: 2020-12-08
INFINEON TECH AG
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Problems solved by technology
In some semiconductor devices there is a risk that activation of undesired parasitic bipolar transistors will reduce the breakdown voltage of the semiconductor device
Method used
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[0020] In the following detailed description, reference is made to the accompanying drawings. The drawings form a part of this specification and, for purposes of illustration, show examples of how the invention may be used and carried out. It is to be understood that the features of the various embodiments described herein may be combined with each other unless specifically stated otherwise.
[0021] refer to figure 1 , schematically shows a cross-sectional view of a semiconductor device including a semiconductor body 100 . The semiconductor body 100 may include conventional semiconductor materials such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs), and the like. A transistor device is formed in the semiconductor body 100 , the transistor device is arranged in an active region 220 of the semiconductor body 100 . exist figure 1 , only a small section of the transistor device is shown. In its active region 220, the semiconductor body...
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Abstract
A semiconductor device comprises a semiconductor body comprising a first surface and a second surface opposite to the first surface in a vertical direction, and a plurality of transistor cells at least partly integrated in the semiconductor body. Each of the plurality of transistor cells comprises at least two source regions, a first gate electrode and a second gate electrode spaced apart from each other in a first horizontal direction, each of the first gate electrode and the second gate electrode being arranged adjacent to and dielectrically insulated from a continuous body region, a drift region separated from the at least two source regions by the body region, and at least three contact plugs extending from the body region towards a source electrode in the vertical direction, wherein the at least three contact plugs are arranged successively between the first gate electrode and the second gate electrode, and wherein only the two outermost contact plugs that are arranged closest tothe first gate electrode and the second gate electrode, respectively, directly adjoin at least one of the source regions.
Description
technical field [0001] The present disclosure relates to semiconductor devices, and in particular to superjunction semiconductor devices. Background technique [0002] Semiconductor devices such as insulated gate power transistor devices such as power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) or IGBTs (Insulated Gate Bipolar Transistors) are widely used as electronic switches in various types of electronic applications. type transistor). In many applications, the robustness (robustness) of such semiconductor devices is a critical aspect. Many applications require switching unclamped inductive loads that can cause high stress within transistor devices due to high currents that induce high device temperatures. In some semiconductor devices, there is a risk that activating undesired parasitic bipolar transistors will reduce the breakdown voltage of the semiconductor device. [0003] It would be desirable to provide robust semiconductor devices with reduced...
Claims
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IPC IPC(8): H01L27/082H01L27/088H01L29/739H01L29/78
CPCH01L27/0823H01L27/088H01L29/7395H01L29/7827H01L29/7831H01L29/7813H01L29/7802H01L29/0634H01L29/41766H01L29/7811H01L29/1095H01L29/0865H01L29/0696
Inventor F·赫勒C·法赫曼W·凯因德尔H·韦伯
Owner INFINEON TECH AG