High-performance resonator with double-layer co-directional interdigital transducer structure
A technology of interdigital transducer and interdigital structure, applied in impedance networks, electrical components, etc., can solve problems such as low bandwidth and low speed of sound, and achieve the effects of low loss, high bandwidth and excellent performance
Active Publication Date: 2021-10-08
GUANGDONG CANCHIP TECH CO LTD
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Problems solved by technology
Filters have always been an important part of radio frequency signal processing. In the 5G era, with the continuous increase of communication frequency bands, the development of 5G mobile phone filters requires lower loss, higher frequency and larger bandwidth. (SAW) and Bulk Acoustic Wave (BAW) technologies present serious challenges, which are typically limited by lower sound velocity, lower bandwidth
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[0050] Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0051] figure 1 It is a perspective view showing a high-performance resonator 100 having a double-layer isotropic IDT structure according to an embodiment of the present invention. figure 2 It is a side cross-sectional view showing a detailed structure of a high-performance resonator 100 having a double-layered isotropic IDT structure according to an embodiment of the present invention.
[0052] Such as figure 1 As shown, the high-performance resonator involved in the embodiment of the present invention is a high-performance resonator 100 having a double-layer isotropic IDT structure.
[0053] Such as figure 1 As shown, the high-performance resonator 100 with a double-layer isotropic IDT structure involved in the embodiment of the present invention includes metal electrode groups 101-104, a piezoelectric substrate layer 105, a low-sonic dielectric layer 106, and a h...
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Abstract
The high-performance resonator with double-layer codirectional interdigital transducer structure involved in the present invention includes a high-sonic dielectric substrate layer, a low-sonic dielectric layer, a piezoelectric substrate layer, a first metal electrode group, and a second metal electrode Group, the third metal electrode group and the fourth metal electrode group, the first metal electrode group and the second metal electrode group, and the third metal electrode group and the fourth metal electrode group respectively form an interdigitated structure, and are respectively formed in the piezoelectric upper and lower surfaces of the substrate layer. Each electrode group is formed by respectively connecting a plurality of electrodes with bus bars. The first metal electrode group and the third metal electrode group face each other in the stacking direction across the piezoelectric substrate layer, and have the same polarity, and the second metal electrode group and the fourth metal electrode group are stacked across the piezoelectric substrate layer. The directions are opposite to each other, and the polarities are the same, and the polarities of the first metal electrode group and the third metal electrode group are opposite to those of the second metal electrode group and the fourth metal electrode group.
Description
technical field [0001] The present invention relates to a high-performance resonator with a double-layer co-directional interdigital transducer structure. Background technique [0002] With the rapid development of 5G technology, higher requirements are put forward for the filters of 5G mobile phones. Filters have always been an important part of radio frequency signal processing. In the 5G era, with the continuous increase of communication frequency bands, the development of 5G mobile phone filters requires lower loss, higher frequency and larger bandwidth. (SAW) and Bulk Acoustic Wave (BAW) technologies present serious challenges, which are typically limited by lower sound velocity, lower bandwidth. [0003] In the existing surface acoustic wave (SAW) and bulk acoustic wave (BAW) technologies, the metal film electrode group formed on the piezoelectric material layer is formed into an interdigital structure, and the piezoelectric and inverse piezoelectric effects of the pi...
Claims
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IPC IPC(8): H03H9/17H03H9/19H03H9/25
CPCH03H9/174H03H9/19H03H9/25
Inventor 李红浪柯亚兵
Owner GUANGDONG CANCHIP TECH CO LTD