A processing device for growing gallium nitride epitaxial layer on patterned sapphire substrate

A patterned sapphire and processing device technology, applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of high cost, complex structure, and inability to quickly adjust the temperature conditions for growing gallium nitride epitaxial layers on sapphire substrates. Achieve the effect of low cost, simple structure, convenient and quick adjustment

Active Publication Date: 2022-04-26
WUXI RES INST OF APPLIED TECH TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the deficiencies of the prior art, the present invention provides a processing device for growing gallium nitride epitaxial layers on patterned sapphire substrates, which solves the problem of existing devices for growing gallium nitride epitaxial layers on sapphire substrates. Complicated, high cost, unable to quickly adjust the temperature conditions for growing gallium nitride epitaxial layers on sapphire substrates

Method used

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  • A processing device for growing gallium nitride epitaxial layer on patterned sapphire substrate
  • A processing device for growing gallium nitride epitaxial layer on patterned sapphire substrate
  • A processing device for growing gallium nitride epitaxial layer on patterned sapphire substrate

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Embodiment 1

[0032]A processing device for growing a gallium nitride epitaxial layer on a patterned sapphire substrate, comprising a processing box 1, a rotary motor 2 is fixedly connected to the bottom of the inner wall of the processing box 1, and a processing table is fixedly connected to an output end of the rotary motor 2 3. A clamping mechanism 4 is arranged on the processing table 3, a fixing plate 5 is fixedly connected above the inner walls of the processing box 1, and an adjustment mechanism 6 is arranged inside the processing box 1; the adjustment mechanism 6 includes a coolant storage tank 61 , liquid pump 62 and heating pipe 63, the input end of the liquid pump 62 is fixedly connected with an input pipe 64, one end of the input pipe 64 is fixedly connected with one side of the cooling liquid storage tank 61, and the output end of the liquid pump 62 is fixedly connected with an output pipe 65. One end of the output pipe 65 is fixedly connected with a spray head 66, and both ends...

Embodiment 2

[0034] A processing device for growing a gallium nitride epitaxial layer on a patterned sapphire substrate, comprising a processing box 1, a rotary motor 2 is fixedly connected to the bottom of the inner wall of the processing box 1, and a processing table is fixedly connected to an output end of the rotary motor 2 3. A clamping mechanism 4 is arranged on the processing table 3, a fixing plate 5 is fixedly connected above the inner walls of the processing box 1, and an adjustment mechanism 6 is arranged inside the processing box 1; the adjustment mechanism 6 includes a coolant storage tank 61 , liquid pump 62 and heating pipe 63, the input end of the liquid pump 62 is fixedly connected with an input pipe 64, one end of the input pipe 64 is fixedly connected with one side of the cooling liquid storage tank 61, and the output end of the liquid pump 62 is fixedly connected with an output pipe 65. One end of the output pipe 65 is fixedly connected with a spray head 66, and both end...

Embodiment 3

[0036] A processing device for growing a gallium nitride epitaxial layer on a patterned sapphire substrate, comprising a processing box 1, a rotary motor 2 is fixedly connected to the bottom of the inner wall of the processing box 1, and a processing table is fixedly connected to an output end of the rotary motor 2 3. A clamping mechanism 4 is arranged on the processing table 3, a fixing plate 5 is fixedly connected above the inner walls of the processing box 1, and an adjustment mechanism 6 is arranged inside the processing box 1; the adjustment mechanism 6 includes a coolant storage tank 61 , liquid pump 62 and heating pipe 63, the input end of the liquid pump 62 is fixedly connected with an input pipe 64, one end of the input pipe 64 is fixedly connected with one side of the cooling liquid storage tank 61, and the output end of the liquid pump 62 is fixedly connected with an output pipe 65. One end of the output pipe 65 is fixedly connected with a spray head 66, and both end...

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Abstract

The invention discloses a processing device for growing a gallium nitride epitaxial layer on a patterned sapphire substrate. A processing table, the processing table is provided with a clamping mechanism, a fixed plate is fixedly connected above the inner walls of the processing box, and an adjustment mechanism (6) is provided inside the processing box; the processing device utilizes heating The high temperature generated by the tube creates a high temperature environment inside the processing box, which meets the high temperature environment required for the processing of growing gallium nitride epitaxial layers on the sapphire substrate. The structure is simple, the cost is low, and it is convenient and fast to adjust The problem of the temperature condition of the gallium epitaxial layer.

Description

technical field [0001] The invention relates to the technical field of LED chip fabrication, in particular to a processing device for growing a gallium nitride epitaxial layer on a patterned sapphire substrate. Background technique [0002] Patterning the sapphire substrate, that is, growing a mask for dry etching on the sapphire substrate, engraving the mask with a standard photolithography process, etching the sapphire using ICP etching technology, removing the mask, and then removing the mask. The GaN material is grown thereon, so that the longitudinal epitaxy of the GaN material becomes lateral epitaxy. On the one hand, it can effectively reduce the dislocation density of the GaN epitaxial material, thereby reducing the non-radiative recombination of the active area, reducing the reverse leakage current, and improving the life of the LED; on the other hand, the light emitted by the active area, through GaN and sapphire The interface of the substrate scatters multiple ti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
CPCH01L33/007
Inventor 徐宏龚桦周德金黄伟吴超于理科夏泳
Owner WUXI RES INST OF APPLIED TECH TSINGHUA UNIV
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