Unlock instant, AI-driven research and patent intelligence for your innovation.

High aspect ratio microstructure reflective interferometric non-destructive measurement device

A technology of interference microscopy and high aspect ratio, which is applied in the direction of measuring devices, optical devices, instruments, etc., can solve the problems of measuring the depth and width of MEMS high aspect ratio trench structures, and improve imaging quality and interference fringe contrast , to ensure the effect of measurement accuracy

Active Publication Date: 2021-12-10
NANJING UNIV OF SCI & TECH
View PDF13 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a high-aspect-ratio microstructure reflective interference microscopic non-destructive measurement device to solve the problem that the existing interferometric micro-non-destructive measurement method cannot measure the depth and width of the MEMS high aspect ratio groove structure question

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High aspect ratio microstructure reflective interferometric non-destructive measurement device
  • High aspect ratio microstructure reflective interferometric non-destructive measurement device
  • High aspect ratio microstructure reflective interferometric non-destructive measurement device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] In order to make the above objects, features and advantages of the present invention more obvious and comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0027] combine figure 1 , a high-aspect-ratio microstructure reflective interference microscopy non-destructive measurement device, including a near-infrared short-coherent light source 1, a Kohler illumination system, a first cubic beamsplitter prism 6, a first optical path refraction system 7, a deformable mirror 8, and a second A relay lens group 9, a first microscope objective lens 10, a sample to be tested 11, a piezoelectric ceramic PZT12, a second cubic beamsplitter prism 13, a tube lens 14, a first infrared detector 15, a pupil lens 16, a monochromatic filter An optical sheet 17 , a second infrared detector 18 , a second optical path deflection system 19 , a second plane mirror 20 , a second relay lens group 21 , a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a high-aspect-ratio microstructure reflective interference microscopic non-destructive measurement device, which solves the problem that the existing testing technology cannot perform non-destructive measurement on the depth and width of a high-aspect-ratio groove structure in a silicon-based MEMS device. This device makes full use of the advantage that near-infrared light can penetrate the silicon substrate, and can use a large numerical aperture converging beam for measurement; aiming at the problem that the large numerical aperture beam converged by the microscopic objective lens is modulated by the groove structure of the sample to be measured to reduce the focus of the beam , set the microscope objective lens exit pupil aberration monitoring optical path and aberration active compensation system, so that the large numerical aperture beam can converge to the bottom of the groove; use the vertical scanning interferometry to obtain the depth and width measurement results of the groove structure of the sample to be tested. The invention overcomes the difficulty that the existing measurement technology cannot realize the non-destructive measurement of the high aspect ratio groove structure of the silicon-based MEMS device, and can perform high-precision non-destructive measurement of the depth and width of the deep groove structure of the sample to be measured.

Description

technical field [0001] The invention relates to the technical field of precision optical measurement engineering, in particular to a high-aspect-ratio microstructure reflective interference microscopic non-destructive measuring device, which measures the depth and width of the groove structure of silicon-based MEMS devices, and is especially suitable for high-aspect-ratio devices. deep groove structure. Background technique [0002] With the development of micro-electromechanical systems (MEMS), the measurement requirements for microstructures are getting higher and higher. In silicon-based MEMS processing technology, the aspect ratio is one of the main indicators, which directly affects the performance of MEMS devices; The groove width of the aspect ratio microstructure is 3~10 μm, the depth is 10~300 μm, and the aspect ratio is generally between 10~100: 1. The development of this high aspect ratio microstructure is very important for driving MEMS technology in Application...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01B11/02G01B11/22
CPCG01B11/02G01B11/22
Inventor 高志山马剑秋袁群孙一峰周俊涛谢澎飞李赫然
Owner NANJING UNIV OF SCI & TECH