Bidirectional ESD protection device with adjustable trigger voltage and preparation method thereof

Abstract

The invention provides a bidirectional ESD protection device with adjustable trigger voltage and a preparation method thereof. The bidirectional ESD protection device comprises a substrate; a deep N trap; a N trap and a P trap, wherein the N trap comprises a central region and extension regions, wherein the extension regions and the P trap are alternately distributed in sequence and surround the outer side of the central region; a first P+ injection region and a second P+ injection region, wherein the first P+ injection region is located in the extension region of the N trap and is not in contact with the P trap, and the second P+ injection region is located in the central region of the N trap and is in contact with the P trap; and an N+ injection region which is arranged in the P trap andis not in contact with the second P+ injection region. According to the bidirectional ESD protection device with the adjustable trigger voltage and the preparation method of the bidirectional ESD protection device, the PNP triode with the floating base region is connected with the PN junction in parallel, so the problem of low breakdown voltage can be effectively solved; a plurality of PNP triodes and PN junctions are connected in parallel through an octagonal structure, so the current discharging capacity is greatly improved, and the device is small in size and low in cost; the trigger voltage can be adjusted by adjusting the size of the contact edge of the polygonal structure.

Description

technical field [0001] The invention relates to the field of electrostatic protection, in particular to a bidirectional ESD protection device with adjustable trigger voltage and a preparation method thereof. Background technique [0002] As microelectronic devices are shrinking in size and integrating functions, electrostatic protection (Electrostatic discharge, ESD) of chips is becoming more and more important. On the one hand, the gate dielectric and isolation of small-sized devices are thinner, which leads to the weakening of the device's ability to withstand static electricity, thus narrowing the window for ESD device design; on the other hand, more and more modules are integrated on the same silicon substrate, causing the chip to suffer from ESD risks are increasing. ESD protection devices are divided into non-hysteretic devices and hysteresis devices. Non-hysteretic devices, such as resistors and diodes, exhibit low-resistance characteristics after the trigger voltag...

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a bidirectional ESD protection device with an adjustable trigger voltage and a preparation method thereof, which is used to solve the problem of easy breakdown of the bidirectional ESD protection device at high temperature in the prior art, Difficult to adjust the trigger voltage and problems such as latch-up

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