Bidirectional ESD protection device with adjustable trigger voltage and preparation method thereof

Abstract

The invention provides a bidirectional ESD protection device with adjustable trigger voltage and a preparation method thereof, comprising: a substrate; a deep N well; an N well and a P well, the N well includes a central region and an extension region, and the extension region and the P well alternate in turn Distributed and surrounded outside the central region; the first and second P+ implantation regions, the first P+ implantation region is located in the extension region of the N well and is not in contact with the P well, the second P+ implantation region is located in the central region of the N well and is not in contact with the P well Contact; the N+ injection region is arranged in the P well and is not in contact with the second P+ injection region. The bidirectional ESD protection device with adjustable trigger voltage and the preparation method thereof of the present invention connect the floating PNP transistor and the PN junction in parallel, which can effectively overcome the problem of low breakdown voltage; multiple PNP transistors are connected in parallel through an octagonal structure and The PN junction greatly improves the ability to discharge current, and the device is small in size and low in cost; the adjustment of the trigger voltage can be realized by adjusting the contact edge size of the polygonal structure.

Description

technical field [0001] The invention relates to the field of electrostatic protection, in particular to a bidirectional ESD protection device with adjustable trigger voltage and a preparation method thereof. Background technique [0002] As microelectronic devices are shrinking in size and integrating functions, electrostatic protection (Electrostatic discharge, ESD) of chips is becoming more and more important. On the one hand, the gate dielectric and isolation of small-sized devices are thinner, which leads to the weakening of the device's ability to withstand static electricity, thus narrowing the window for ESD device design; on the other hand, more and more modules are integrated on the same silicon substrate, causing the chip to suffer from ESD risks are increasing. ESD protection devices are divided into non-hysteretic devices and hysteresis devices. Non-hysteretic devices, such as resistors and diodes, exhibit low-resistance characteristics after the trigger voltag...

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a bidirectional ESD protection device with an adjustable trigger voltage and a preparation method thereof, which is used to solve the problem of easy breakdown of the bidirectional ESD protection device at high temperature in the prior art, Difficult to adjust the trigger voltage and problems such as latch-up

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