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Memory and its manufacturing method

A memory and storage layer technology, applied in semiconductor devices, electrical solid state devices, electrical components, etc., can solve problems such as large input voltage, degradation of memory structure, and lower reliability of memory, increasing the probability of achieving, improving reliability, and reducing programming voltage and the effect of the erase voltage

Active Publication Date: 2021-02-12
YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when programming or erasing a memory with a thicker tunneling layer, the input voltage that needs to be provided is also relatively large, resulting in degradation of the memory structure and reducing the reliability of the memory

Method used

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  • Memory and its manufacturing method
  • Memory and its manufacturing method
  • Memory and its manufacturing method

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Embodiment Construction

[0070] The technical solution of the present disclosure will be further elaborated below in conjunction with the drawings and embodiments. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0071] In the following paragraphs the invention is described more specifically by way of example with reference to the accompanying drawings. The advantages and features of the present disclosure will be more apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use inaccurate scales, which are only used to facilitate and clearly assist the purpose of illustrat...

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Abstract

The embodiment of the present disclosure discloses a memory and a manufacturing method thereof. The memory includes: a channel layer, a tunnel layer, a gating layer, and a storage layer arranged side by side in sequence; the gating layer has an on state and an off state ; wherein the gate layer in the open state is conductive, and the gate layer in the closed state is electrically insulated; when the gate layer is in the open state and is applied to the tunneling layer When the voltage is greater than the threshold voltage, the tunneling layer and the gating layer allow charged particles to be transported between the channel layer and the storage layer; when the gating layer is in the closed state, the The tunneling layer and the gating layer block the transport of charged particles between the channel layer and the storage layer.

Description

technical field [0001] Embodiments of the present disclosure relate to the field of integrated circuits, and in particular, to a memory and a manufacturing method thereof. Background technique [0002] When programming or erasing a memory, it is usually necessary to provide an input voltage to allow charged particles to pass through the tunneling layer between the storage layer and the channel layer. [0003] In order to improve the data retention capability of the memory, the thickness of the tunneling layer is usually relatively large. However, when programming or erasing a memory with a thicker tunneling layer, a larger input voltage needs to be provided, resulting in degradation of the memory structure and lowering the reliability of the memory. Contents of the invention [0004] In view of this, an embodiment of the present disclosure provides a memory and a manufacturing method thereof. [0005] According to a first aspect of an embodiment of the present disclosure...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11521H01L27/11568H10B41/30H10B43/30
CPCH10B43/30H10B41/30
Inventor 刘峻
Owner YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD