A substrate type diffractive optical element vcsel light splitting structure and preparation method
A diffractive optical element and light-splitting technology, which is applied in the direction of optical elements, optics, electrical elements, etc., can solve problems such as difficulty in miniaturization
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[0028] In view of certain limitations of ToF technology in the above background and the advantages and related principles of structured light technology in short-distance recognition, the present invention provides a substrate-type diffractive optical element VCSEL light-splitting structure and a preparation method.
[0029] Such as figure 1 As shown, the present invention provides a substrate-type diffractive optical element VCSEL light-splitting structure, which sequentially includes: a heat sink 1, a bottom-emitting VCSEL array chip 2, a substrate layer 3 with a binary diffraction grating 4, and a metasurface Structural layer 5, protective layer 6 and anti-reflection film layer 7; specifically:
[0030] The bottom of the bottom emission VCSEL array chip 2 is welded on the heat sink 1, the top of the bottom emission VCSEL array chip 2 is provided with a substrate layer 3, and the upper surface of the substrate layer 3 is etched with a binary diffraction grating 4 by a photol...
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[0043] Specific implementation 1
[0044] The present invention provides a substrate-type diffractive optical element VCSEL spectroscopic structure, which sequentially includes: a heat sink 1, a bottom-emitting VCSEL array chip 2, a substrate layer 3 with a binary diffraction grating 4, and a metasurface structure layer 5 from bottom to top. , protective layer 6 and anti-reflection coating layer 7;
[0045] On the bottom emission VCSEL chip substrate layer 3 material surface etching binary diffraction grating 4 structure ( figure 2 ), specifically, bake the substrate pretreated with deionized water in an oven for ten minutes; after taking it out, use a spin coater to coat a positive photoresist, perform direct writing exposure after baking before exposure, and Then use dilute KOH solution to develop and treat for 40s; then clean it with deionized water and put it in an oven to harden the film for about 10 minutes. Finally dry etching (such as using ICP etching system, CHF ...
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