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Band-gap reference circuit with high power supply rejection ratio

A technology with high power supply rejection ratio and reference circuit, which is applied in the field of circuits to achieve the effects of low temperature coefficient, reduction of resistance area, and saving of resistance area

Pending Publication Date: 2020-12-25
SHENZHEN AIXIESHENG TECH CO LTD
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  • Claims
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Problems solved by technology

However, the relatively low power supply rejection ratio of such structures has been an open issue

Method used

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  • Band-gap reference circuit with high power supply rejection ratio

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Embodiment Construction

[0024] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0025] see figure 1 , in an embodiment of the present invention: provide a high power supply rejection ratio bandgap reference circuit, including a reference voltage generation circuit, a bias voltage generation circuit and a rough calibration circuit, the reference voltage generation circuit consists of four transistors: Q0, Q1, Q2, Q3, current mirror load: P1, P2, P3, P9, P10, P11, N1, N2, N3, resistance: R0, R1, compensation capacitor C0; bias...

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Abstract

The invention discloses a band-gap reference circuit with a high power supply rejection ratio. The band-gap reference circuit comprises a reference voltage generation circuit, a bias voltage generation circuit and a coarse calibration circuit, wherein the reference voltage generation circuit consists of four triodes Q0, Q1, Q2 and Q3, current mirror loads P1, P2, P3, P9, P10, P11, N1, N2 and N3, resistors R0 and R1 and a compensation capacitor C0; the bias voltage generation circuit consists of P0, P8 and N0; and the coarse calibration circuit consists of four control tubes P4, P6, P12 and P13and two current multiplexing tubes P5 and P7. According to the band-gap reference circuit, the resistance area can be saved by 1 / 3 under the same power consumption; the power supply rejection ratio is increased by 10dB under the same frequency; a current calibration structure and a conventional resistance calibration structure are combined for temperature coefficient adjustment, so that the resistance area is further reduced; and the band-gap reference circuit has the advantages of relatively low process cost, simple structure, relatively low temperature coefficient and the like.

Description

technical field [0001] The invention relates to the technical field of circuits, in particular to a bandgap reference circuit with high power supply rejection ratio. Background technique [0002] The bandgap reference source is an essential part of today's large-scale analog integrated circuits and digital-analog hybrid circuits. It has a wide range of applications, such as: providing a stable and accurate voltage reference in digital-to-analog converters, and serving as the basis for system measurement and calibration in digital communications. [0003] There are two common bandgap reference circuits, one uses a current mirror as a load, and the other uses a unity gain buffer to generate a reference. Since the unity-gain buffer needs to occupy a large chip area, it is not conducive to reducing the production cost. In addition, due to the influence of factors such as process variation and offset voltage, the reference voltage temperature coefficient of the actually manufac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/46G05F1/575
CPCG05F1/463G05F1/468G05F1/575
Inventor 李得全夏群兵胡海军
Owner SHENZHEN AIXIESHENG TECH CO LTD
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