Gate-controlled gallium oxide field effect transistor based on p-i-n structure and its preparation method

Abstract

The invention discloses a gate-controlled gallium oxide field effect transistor based on a p-i-n structure and a preparation method thereof, which mainly solves the problem that the current n-type gallium oxide field effect transistor has a low breakdown voltage and is difficult to turn off. Its bottom-up includes: Ga 2 o 3 Substrate, n‑Ga 2 o 3 An epitaxial layer, the two ends of the upper part of the epitaxial layer are provided with an ion implantation area, and the middle area is provided with a gate electrode; the upper part of the ion implantation area is respectively provided with a source electrode and a drain electrode; the inner surface and the gate electrode are respectively connected to the source electrode and the drain electrode n‑Ga between 2 o 3 Al on top of the epitaxial layer 2 o 3 protective layer; i-Ga between the epitaxial layer and the gate electrode 2 o 3 thin film layer and p-type NiO thin film layer, the p-type NiO thin film layer, i-Ga 2 o 3 thin film layers and n‑Ga 2 o 3 The epitaxial layers form a p‑i‑n structure. The invention improves the performance and reliability of the device and can be used to prepare enhanced gallium oxide devices with high breakdown voltage.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a gate-controlled gallium oxide field effect transistor, which can be used to prepare high withstand voltage enhanced gallium oxide devices. [0002] technical background [0003] Gallium oxide has five crystal forms of α, β, γ, δ and ε, among which the monoclinic β-Ga 2 O 3 With the best thermal stability, other metastable phases can easily transform into β-Ga at high temperature 2 O 3 , so most of the current research is around β-Ga 2 O 3 Expanded. β-Ga 2 O 3 It has a large forbidden band width (4.4-4.9eV), which makes its ionization rate low and the breakdown field strength is high, about 8MV / cm, which is more than 20 times that of Si and twice that of SiC and GaN many. In addition, β-Ga 2 O 3 The quality factor of Baliga is more than 8 times that of 4H-SiC and more than 4 times that of GaN; the high-frequency Baliga figure of merit is about...

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Problems solved by technology

figure 1 Although the ideal breakdown voltage of the gallium oxide field effect transistor with the horizontal structure shown is very high, the breakdown voltage of the actually prepared device is much lower than the ideal value, and the leakage current is relatively large; in addition, a certain negative gate must be applied. Only when the gate voltage is zero-biased can the device be turned off, that is, the device is not turned off, which reduces the reliability of the device, increases the static power consumption of the device, and limits its application range.

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