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33results about How to "Reduce static loss" patented technology

Vehicle and charging control method and system used for vehicle low-voltage battery

The invention discloses a vehicle and a charging control method and system used for a vehicle low-voltage battery. The charging control method comprises the following steps that after the vehicle enters a still standing state, a vehicle controller enters a low power consumption timing mode and starts timing; when the timed time reaches the wake-up time stored in the vehicle controller, the vehicle controller is woken up, the current voltage of the low-voltage battery is detected through the vehicle controller, and whether the current voltage of the low-voltage battery is smaller than or equal to the preset lower electric quantity voltage threshold value or not is judged; and if the current voltage of the low-voltage battery is smaller than or equal to the preset lower electric quantity voltage threshold value, the vehicle controller controls a DC / DC converter to work so that the low-voltage battery can be charged. According to the charging control method used for the vehicle low-voltage battery, when the timed time reaches the wake-up time, the current voltage of the low-voltage battery is judged so as to determine whether charging is conducted, and thus the low-voltage battery can be charged according to the actual demand; and in addition, the still standing loss of the vehicle can be reduced.
Owner:BEIJING ELECTRIC VEHICLE

Charging system based on secondary control and secondary control device thereof

The invention discloses a charging system based on secondary control, which comprises a transformer, a rectifier device, a secondary rectifier switch transistor, a secondary synchronous rectifier auxiliary chip, a primary control chip and a primary switch transistor, wherein the secondary synchronous rectifier auxiliary chip controls opening and closing of the secondary rectifier switch transistor, the secondary rectifier switch transistor is controlled according to a received transmission signal of a charging interface to regulate an abrupt voltage generated at two ends of a secondary winding, and the regulated abrupt voltage is fed back to an auxiliary winding to generate an output voltage switching signal; the primary control chip acquires the output voltage switching signal and then generates a gating signal, and according to the gating signal, the voltage detected by the voltage detection end and the feedback voltage of the voltage feedback end, the primary switch transistor is controlled to regulate the output voltage and the output current of the system. According to the charging system of the invention, the charging output specifications can intelligently change according to a load. The invention also discloses a secondary control device for the charging system based on secondary control.
Owner:BYD SEMICON CO LTD

Low-voltage transformer area load non-power-cut switching system and working method thereof

The invention discloses a low-voltage transformer area load non-power-cut switching system and a working method thereof, and relates to the technical field of electric power operation, maintenance and power supply. At present, power-off switching is needed during power grid maintenance. The system comprises a main conductive branch, a short-time conductive branch, a commercial power bypass, a control circuit and a current/voltage signal acquisition module. The main conductive branch comprises a second circuit breaker Q2; one end of the second circuit breaker Q2 is connected with the mobile box transformer substation/power van S1, and the other end of the second circuit breaker Q2 is connected with the wire outlet end of the low-voltage distribution box JP1; the short-time conductive branch comprises an electronic solid-state switch D1; the short-time conductive branch is connected in parallel with the second circuit breaker Q2; the commercial power bypass comprises a first circuit breaker Q1; and one end of the first circuit breaker Q1 is connected with the wire outlet end of the low-voltage distribution box JP1, and the other end of the first circuit breaker Q1 is connected with the wire inlet end of the low-voltage distribution box JP1. According to the technical scheme, the solid-state electronic solid-state switch D1 bears the transient process, the short-time power failure phenomenon caused by breaking of a mechanical contact is avoided, and therefore non-power-cut switching of the load between the power grid and the standby power supply is achieved.
Owner:HANGZHOU ELECTRIC EQUIP MFG +2

Charging system based on secondary control and its secondary control device

The invention discloses a charging system based on secondary control, comprising: a transformer; a rectification device; a secondary rectification switch tube and a secondary synchronous rectification auxiliary chip, and the secondary synchronous rectification auxiliary chip controls the opening and closing of the secondary rectification switch tube , and control the secondary rectifier switch tube according to the received transmission signal of the charging interface to adjust the sudden voltage generated at both ends of the secondary winding, and generate an output voltage switching signal when the adjusted sudden voltage is fed back to the auxiliary winding; the primary The control chip and the primary switch tube, the primary control chip generates a gate signal when it collects the output voltage switching signal, and controls the primary switch tube according to the gate signal, the voltage detected by the voltage detection terminal and the feedback voltage of the voltage feedback terminal to adjust the system output voltage and output current. The charging system can intelligently change the charging output specification according to the load. The invention also discloses a secondary control device of the charging system based on secondary control.
Owner:BYD SEMICON CO LTD

PN junction gate-controlled gallium oxide field effect transistor and preparation method thereof

The invention discloses a PN junction gate-controlled gallium oxide field effect transistor and a preparation method thereof, and mainly solves the problems of effective p-type doping of a gallium oxide material and bipolar structure loss of a gallium oxide-based device at present. The transistor comprises an insulating substrate and an n-type beta-Ga2O3 thin film layer from bottom to top, a source electrode and a drain electrode are arranged at the two ends of the n-type beta-Ga2O3 thin film layer, a gate electrode is arranged in the middle area, and Al2O3 protection layers are arranged on the n-type beta-Ga2O3 thin film layer between the gate electrode and the source electrode and between the gate electrode and the drain electrode and on the inner surfaces of the source electrode and thedrain electrode. A p-type NiO thin film layer is arranged between the n-type beta-Ga2O3 thin film layer and the gate electrode, and the p-type NiO thin film layer and the n-type beta-Ga2O3 thin filmform a p-n junction. According to the invention, the on-resistance and the gate leakage current of the device are reduced, the voltage endurance capability of the device is improved, the static loss of the device is reduced, and the method can be used for preparing a normally-off high-voltage-withstanding gallium oxide device.
Owner:XIDIAN UNIV

Shield gate groove type field effect transistor and preparation method thereof

The invention relates to a shield gate trench type field effect transistor and a preparation method thereof. The transistor comprises a substrate region, a drift region, a shield gate, a control gate, a matrix region, a source region, an insulating layer, a source electrode, a drain electrode and a metal gate electrode, the drift region, the base region, the source region and the source electrode are sequentially arranged above the substrate region, the drain electrode is arranged below the substrate region, and the control gate and the shield gate are arranged on one side of the drift region from top to bottom; the substrate region, the drift region and the source region are all N-type doped; the doping concentration of the substrate region and the doping concentration of the source region are both larger than the doping concentration of the drift region. The substrate region, the shield gate and the control gate are all P-type doped; the doping concentration of the shield grid is the same as that of the drift region; and the doping concentration of the control grid is greater than that of the shielding grid. According to the scheme provided by the invention, a peak electric field introduced by an electric field concentration effect caused by a relatively small curvature radius at a corner of the shielding grid can be effectively improved, and an effect of improving a breakdown voltage is achieved, so that the specific on-resistance of the device is reduced.
Owner:无锡先瞳半导体科技有限公司

Preparation method of split gate MOSFET device and split gate MOSFET device

The invention relates to the technical field of semiconductors, in particular to a preparation method of a split gate MOSFET device and the split gate MOSFET device. The method comprises the steps of:S1, providing a substrate, forming an epitaxial layer on the substrate, and enabling the width of the bottom surface of the epitaxial layer to be equal to the width of the top surface of the substrate; wherein the corresponding resistivity of the epitaxial layer is changed in a non-uniform gradual change manner from bottom to top. The preparation method has the beneficial effects that: the epitaxial layer is formed on the substrate, and the corresponding resistivity of the epitaxial layer from bottom to top is changed in a non-uniform gradual change manner, so that the internal electric fielddistribution of the device is optimized, the coverage area of two-dimensional breakdown electric field lines at the same position of the device with the same size is larger, and while the electric field intensity is improved, the intensity of the electric field close to the substrate direction is obviously increased, and a depletion region is broadened downwards, so that the breakdown voltage isimproved, and the on-resistance and the static loss of the device are reduced under the same target voltage.
Owner:SHANGHAI CHANGYUAN WAYON MICROELECTRONICS

Gate-controlled gallium oxide field effect transistor based on p-i-n structure and its preparation method

The invention discloses a gate-controlled gallium oxide field effect transistor based on a p-i-n structure and a preparation method thereof, which mainly solves the problem that the current n-type gallium oxide field effect transistor has a low breakdown voltage and is difficult to turn off. Its bottom-up includes: Ga 2 o 3 Substrate, n‑Ga 2 o 3 An epitaxial layer, the two ends of the upper part of the epitaxial layer are provided with an ion implantation area, and the middle area is provided with a gate electrode; the upper part of the ion implantation area is respectively provided with a source electrode and a drain electrode; the inner surface and the gate electrode are respectively connected to the source electrode and the drain electrode n‑Ga between 2 o 3 Al on top of the epitaxial layer 2 o 3 protective layer; i-Ga between the epitaxial layer and the gate electrode 2 o 3 thin film layer and p-type NiO thin film layer, the p-type NiO thin film layer, i-Ga 2 o 3 thin film layers and n‑Ga 2 o 3 The epitaxial layers form a p‑i‑n structure. The invention improves the performance and reliability of the device and can be used to prepare enhanced gallium oxide devices with high breakdown voltage.
Owner:XIDIAN UNIV

Synaptic circuit, synaptic array and data processing method based on synaptic circuit

The embodiments of the present application relate to the field of neural networks. The synaptic circuit provided by the present invention includes: a first memory, a second memory, and a switch assembly; the switch assembly includes a first switch tube, a second switch tube, and a third switch tube; the first end of the first switch tube is connected to the second switch tube. The first end of a memory is connected, the control end of the first switch tube is connected to the first bit line interface; the first end of the second switch tube is connected to the first end of the second memory, the control end of the second switch tube is connected to the first bit line interface The two-bit line interface is connected; the second end of the first memory is connected with the first end of the second memory; the first end of the third switch is connected with the second end of the second memory, and the second end of the third switch is connected with the second end of the second memory. The word line interface is connected, and the third end of the third switching transistor is grounded. Based on the embodiment of the present application, the first memory and the second memory connected in series are respectively controlled by the first switch tube and the second switch tube, so that cross-interference between memories can be reduced during data storage.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI

Zero-interruption hybrid dual power supply automatic conversion device and use method thereof

The invention discloses a zero-interruption hybrid dual power supply automatic conversion device and a use method thereof. The device comprises a conversion device body. An excitation conversion switch and a main control controller are arranged in the conversion device body. The main control controller is provided with an ADC sampling module and an IGBT drive output module. The input end of the excitation conversion switch is connected with a main power supply circuit L1 and a backup power supply circuit L2. The input end of the excitation conversion switch is connected with a load circuit through a bus. An inverter grid-connected power supply unit is arranged next to the excitation conversion switch. The input and output ends of the inverter grid-connected power supply unit are connectedwith the main power supply circuit L1 and the load circuit respectively. The control end of the excitation conversion switch is connected with the signal output end of the main control controller. Thedevice provided by the invention overcomes a traditional conversion switch's problem that the load has a short power failure when a circuit is switched, and has the advantages of lower static loss, higher withstand voltage level and insulation level, and better power supply continuity and stability.
Owner:HANGZHOU ZHIJIANG SWITCHGERA

A vehicle auxiliary power supply circuit and system

The invention provides a vehicle auxiliary power supply circuit and system, comprising a constant power input module, a wake-up signal input module, a power management module, a control module, a wake-up signal detection module and a power delay power-off module; an output end of the constant power input module, The output terminals of the wake-up signal input module are respectively electrically connected with the input terminals of the power management module, the output terminals of the power management module are electrically connected with the input terminals of the control module; the output terminals of the wake-up signal detection module are electrically connected with the input terminals of the control module, and control the The output end of the module is electrically connected with the input end of the power supply delay power-off module, and the output end of the power supply delay power-off module is electrically connected with the input end of the power supply management module. After the electric vehicle key is turned off, it can ensure the time-sharing of each high-voltage relay and save the corresponding information when the whole vehicle is powered off. At the same time, it enters the sleep state after a period of time, reduces its static current and reduces the static loss of the low-voltage battery. The advantage of increasing the service life of the battery.
Owner:武汉葆源新能科技有限公司

A coaxial bicyclic TSV structure with low thermal stress and high electrical performance and preparation method thereof

The invention discloses a coaxial double-ring TSV structure with low thermal stress and high electrical performance and a preparation method. First, the wafer is thinned to a required thickness; then a TSV through hole is formed on the front side of the wafer; and then the inner wall of the TSV through hole is formed The first insulating layer is deposited by thermal oxidation method and deposition method; the diffusion adhesion layer / barrier layer, the seed layer and the outer conductive metal ring are sequentially prepared on the inner wall of the first insulating layer; the diffusion adhesion layer / barrier is deposited on the inner side of the outer conductive metal ring layer, the second insulating layer; prepare the diffusion adhesion layer / barrier layer, the seed layer and the inner conductive metal ring on the inner wall of the second insulating layer; deposit the diffusion adhesion layer / barrier layer in the inner conductive metal ring, and fill the third insulating layer , the coaxial double-ring TSV structure is obtained. The outer conductive metal ring of the present invention is grounded to shield signal interference, and the inner conductive metal ring is used to transmit signals and reduce thermal stress.
Owner:WUHAN UNIV
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