The invention relates to a shield gate trench type
field effect transistor and a preparation method thereof. The
transistor comprises a substrate region, a drift region, a shield gate, a control gate, a matrix region, a source region, an insulating layer, a source
electrode, a drain
electrode and a
metal gate
electrode, the drift region, the base region, the source region and the source electrode are sequentially arranged above the substrate region, the drain electrode is arranged below the substrate region, and the control gate and the shield gate are arranged on one side of the drift region from top to bottom; the substrate region, the drift region and the source region are all N-type doped; the
doping concentration of the substrate region and the
doping concentration of the source region are both larger than the
doping concentration of the drift region. The substrate region, the shield gate and the control gate are all P-type doped; the doping concentration of the shield grid is the same as that of the drift region; and the doping concentration of the
control grid is greater than that of the shielding grid. According to the scheme provided by the invention, a peak
electric field introduced by an
electric field concentration effect caused by a relatively small curvature
radius at a corner of the shielding grid can be effectively improved, and an effect of improving a
breakdown voltage is achieved, so that the specific on-resistance of the device is reduced.