The invention relates to a shield gate trench type field effect transistor and a preparation method thereof. The transistor comprises a substrate region, a drift region, a shield gate, a control gate, a matrix region, a source region, an insulating layer, a source electrode, a drain electrode and a metal gate electrode, the drift region, the base region, the source region and the source electrode are sequentially arranged above the substrate region, the drain electrode is arranged below the substrate region, and the control gate and the shield gate are arranged on one side of the drift region from top to bottom; the substrate region, the drift region and the source region are all N-type doped; the doping concentration of the substrate region and the doping concentration of the source region are both larger than the doping concentration of the drift region. The substrate region, the shield gate and the control gate are all P-type doped; the doping concentration of the shield grid is the same as that of the drift region; and the doping concentration of the control grid is greater than that of the shielding grid. According to the scheme provided by the invention, a peak electric field introduced by an electric field concentration effect caused by a relatively small curvature radius at a corner of the shielding grid can be effectively improved, and an effect of improving a breakdown voltage is achieved, so that the specific on-resistance of the device is reduced.