Optical system for homogenizing intensity of optical radiation
An optical system and optical radiation technology, applied in the field of optical systems, can solve problems such as difficult access to semiconductor material layers
Active Publication Date: 2021-01-12
INNOVATA LTD
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Problems solved by technology
Thus, in the case of an intensity distribution with flatter edges, it is difficult to obtain sufficient intensity in the central flat region to produce a high-quality layer of homogeneously crystalline semiconductor material
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[0047] figure 1 It is schematically shown how to irradiate a semiconductor material with a laser beam in order to produce a homogeneously crystalline layer. A layer 12 of the semiconductor material to be processed is applied to a carrier 10 , for example a glass substrate. In the example shown here, the semiconductor material to be processed is amorphous silicon. The thickness of the layer 12 of semiconductor material is typically about 50 nm.
[0048] A linear laser beam 14 is imaged on the semiconductor material and moved relative to the semiconductor material in the feed direction X, so that the laser line 14 scans and irradiates at least one subregion of the semiconductor material layer 12 . In the example shown here, the carrier 10 and the semiconductor material layer 12 are moved in space and thus relative to the stationary laser beam 14 . The laser line 14 can be moved relative to the semiconductor material layer 12 in such a way that the entire semiconductor materia...
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Abstract
The invention relates to an optical system for homogenizing the intensity of optical radiation for processing a layer of semiconductor material, in particular for producing a crystalline semiconductorlayer, comprising: an optical radiation conversion device having a first device comprising a first radiation conversion element for geometrically splitting an incident light beam into partial light beams along a long axis; and a second device of the second radiation conversion element, which is arranged in the light path of the split light beam and is used for deflecting the deflected split lightbeam again. The optical system further comprises a light beam shaping device and an optical imaging device which are arranged behind the optical radiation conversion device in the light path of the re-deflected split light beam. The first radiation conversion element and the second radiation conversion element are each used for spatially superposing the re-deflected partial light beams with respect to the y-direction as illumination lines lying in an illumination plane and for optically imaging the first radiation conversion element in an imaging plane lying in the illumination plane.
Description
technical field [0001] The invention relates to an optical system for homogenizing the intensity of optical radiation. Such optical systems for generating light radiation with a uniform intensity curve are used for processing semiconductor materials, in particular for producing crystalline semiconductor layers. Background technique [0002] For the crystallization of thin-film layers, for example for the production of thin-film transistors (TFTs), lasers are usually used. In particular silicon (Si), specifically amorphous silicon (a-Si), is used as the semiconductor to be processed. The thickness of the semiconductor layer is, for example, 50 nm, and it is usually located on a substrate (such as a glass substrate) or other carriers. [0003] The layer is irradiated with light from a laser, for example a pulsed solid-state laser. The light here has a wavelength of, for example, 343 nm, is shaped as an illumination line and is imaged on the imaging plane of the semiconducto...
Claims
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IPC IPC(8): G02B27/09G02B23/00
CPCG02B27/0938G02B27/0966G02B23/00H01L21/02678G02B27/106G02B27/14G02B27/0916G02B5/09G02B3/06H01L21/268
Inventor S·格伯特R·米勒H·卡勒特
Owner INNOVATA LTD