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Light-emitting diode chip and manufacturing method thereof

A light-emitting diode and chip technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as chip failure and corrosion, and achieve the effect of preventing chip failure and improving reliability

Active Publication Date: 2021-10-08
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Most of the N-type pads and P-type pads in the related art are outside the passivation protection layer, and are easily corroded by the environment, resulting in chip failure

Method used

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  • Light-emitting diode chip and manufacturing method thereof
  • Light-emitting diode chip and manufacturing method thereof
  • Light-emitting diode chip and manufacturing method thereof

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Embodiment Construction

[0031] In order to make the purpose, technical solution and advantages of the present disclosure clearer, the implementation manners of the present disclosure will be further described in detail below in conjunction with the accompanying drawings.

[0032] LED is a commonly used light-emitting device, and the chip is the core device of LED. The flip-chip LED chip includes a transparent substrate, an N-type semiconductor layer, an active layer, a P-type semiconductor layer, an N-type electrode, a P-type electrode, a passivation protection layer, an N-type pad and a P-type pad. The N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on the transparent substrate. The P-type semiconductor layer is provided with a groove extending to the N-type semiconductor layer, the N-type electrode is arranged on the N-type semiconductor layer in the groove, and the P-type electrode is arranged on the P-type semiconductor layer. The passivat...

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PUM

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Abstract

The disclosure provides a light-emitting diode chip and a manufacturing method thereof, which belong to the technical field of semiconductors. The chip includes a transparent substrate, an N-type semiconductor layer, an active layer, a P-type semiconductor layer, an N-type electrode, a P-type electrode, an insulating layer, an N-type pad, a P-type pad and a protective layer; grooves are provided on the epitaxial layer and the isolation groove; the N-type electrode is arranged on the N-type semiconductor layer, and the P-type electrode is arranged on the P-type semiconductor layer; the insulating layer is laid on the area except the area where the N-type electrode and the P-type electrode are located, and the insulating layer is provided There are a first through hole and a second through hole; the N-type pad is arranged in the first through hole and on the insulating layer, and the P-type pad is arranged in the second through hole and on the insulating layer; the N-type pad and the P-type The pads all include a corrosion-sensitive layer, a corrosion-responsive layer and a welding layer stacked in sequence, and the protective layer is inserted in the corrosion-responsive layer in the edge area of ​​the N-type pad and the P-type pad, and extends at least to the N-type pad and the P-type pad. The setting surface of the P-type pad. The disclosure has high reliability.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, in particular to a light emitting diode chip and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a commonly used light-emitting device, which releases energy and emits light through recombination of electrons and holes. By using different semiconductor materials and structures, LEDs can cover a full color range from ultraviolet to infrared, and are widely used in display, decoration, communication and other fields in economic life. [0003] The chip is the core device of the LED, including three structures: front-mount, flip-chip and vertical. In the related art, a flip-chip LED chip includes a transparent substrate, an N-type semiconductor layer, an active layer, a P-type semiconductor layer, an N-type electrode, a P-type electrode, a passivation protection layer, an N-type pad, and a P-type pad. The N-type semic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/62H01L33/54
CPCH01L33/54H01L33/62H01L2933/0016H01L2933/005H01L2933/0066
Inventor 兰叶吴志浩李鹏
Owner HC SEMITEK ZHEJIANG CO LTD