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Chemical mechanical grinding process

A grinding process, chemical-mechanical technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as depth and contour changes

Pending Publication Date: 2021-01-22
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, when the protrusion is removed in the above manner, the exposed substrate of the hole, groove or opening is partially removed at the same time, resulting in a change in the depth and profile of the hole, groove or opening.

Method used

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  • Chemical mechanical grinding process
  • Chemical mechanical grinding process
  • Chemical mechanical grinding process

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Embodiment Construction

[0018] Embodiments are listed below and described in detail with accompanying drawings, but the provided embodiments are not intended to limit the scope of the present invention. In addition, the drawings are for illustration purposes only and are not drawn to original scale. In order to facilitate understanding, the same elements will be described with the same symbols in the following description.

[0019] The terms "comprising", "including", "having" and so on used in the text are all open terms, which means "including but not limited to". Furthermore, the directional terms mentioned in the text, such as "up", "down", etc., are only used to refer to the directions of the drawings, and are not used to limit the present invention.

[0020] In the following embodiments, the numbers and shapes mentioned are only used to specifically illustrate the present invention to facilitate understanding of its content, but not to limit the present invention.

[0021] Figure 1A to Figur...

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Abstract

The invention provides a chemical mechanical grinding process. The chemical mechanical grinding process comprises the following steps that a layer to be ground is provided, the layer to be ground is provided with an open hole, a groove and / or an opening, and protrusions are arranged at the top corners of the open hole, the groove and / or the opening; a grinding pad having a plurality of fluff on asurface is provided; and the plurality of fluff of the grinding pad intermittently contacts with the protrusions in a moving direction perpendicular to a top surface of the layer to be ground in the presence of a grinding slurry having no grinding particles.

Description

technical field [0001] The present invention relates to a semiconductor manufacturing process, in particular to a chemical mechanical polishing process (CMP) process. Background technique [0002] In a general semiconductor manufacturing process, after forming a hole, trench or opening, an etching process is usually performed to adjust the profile of the formed hole, trench or opening. In detail, after the holes, grooves or openings are formed, protrusions often exist at top corners of the formed holes, grooves or openings, resulting in reduced width of the tops of the holes, grooves or openings. In this way, in subsequent processes, after the material is filled into the hole, trench or opening, the material cannot completely fill the hole, trench or opening and form voids therein. In order to solve the above problems, after forming the hole, trench or opening, an anisotropic etching process is performed to remove the protrusion by ion bombardment. [0003] However, when t...

Claims

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Application Information

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IPC IPC(8): H01L21/3105H01L21/321
CPCH01L21/31053H01L21/3212
Inventor 陈义中
Owner WINBOND ELECTRONICS CORP