Design method of thin film transistor

Abstract

The invention discloses a design method of a thin film transistor. The method comprises the following steps: calculating characteristic parameters of a searched material; screening materials accordingto the characteristic parameter threshold value to obtain a first active layer material; simulating by taking the first active layer material as an active layer material in the thin film transistor device model to obtain device characteristics of the thin film transistor device; screening the first active layer material according to the device characteristic threshold to obtain a second active layer material; taking the second active layer material as an active layer material of the thin film transistor device for an experiment; and when the experiment result does not meet the preset requirement, selecting another second active layer material to carry out the experiment again, and completing the design of the thin film transistor device until the experiment result meets the preset requirement. According to the method, a large number of physical properties related to the active layer material of the thin film transistor device and a corresponding active layer material database can be obtained through a simple method, and theoretical guidance is provided for researching the characteristics of the thin film transistor device.

Description

Technical field[0001]The invention relates to the field of semiconductor transistor devices, in particular to a method for designing thin film transistors.Background technique[0002]As a useful supplement to field effect transistors, thin film transistors have been widely used in display, sensing and other fields in recent years. Compared with field-effect transistors, thin-film transistors are made of various types of semiconductor materials, and the manufacturing process is relatively simple, and relatively inexpensive large-area spin coating, printing, etc. can be used, so the manufacturing cost is relatively low. In addition, the film material can be made under lower temperature conditions, so materials with poor heat resistance (such as plastic paper and other substrates) can be selected to manufacture electronic devices with light weight, toughness and bendable characteristics. However, due to the wide variety of materials used to make thin film transistor devices, there are st...

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Problems solved by technology

However, although the structure of thin film transistor devices is simple, the factors that affect its characteristics are diverse, and the current experimental methods and theoretical methods are difficult to fully describe the characteristics of thin film transistor devices.

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